No abstract

In this paper, a novel Al2O3/ZnO/Al2O3 stack is proposed as the silicon passivation layer for c-Si solar cell application. Recently, the Al2O3 film has been proved to be effective for passivating the p-type c-Si surface by forming the negative fixed oxide charge. It is confirmed by this experiment that the amount of negative fixed oxide charge can be controlled by inserting a ZnO interlayer (IL), which is explained by acceptor-like defect (VZn, Oi, and OZn) formation determined by the room-temperature photoluminescence (RTPL) analysis. The effect of ZnO IL is investigated using Al2O3 bottom layers of various thicknesses by electrical and physical analyses. The effective lifetime measurement shows that the electronic recombination losses at the silicon surface are reduced effectively by optimizing the Al2O3/ZnO/Al2O3 stack.

Abstract-This paper presents a study of the process temperature dependence of Al 2 O 3 film grown by thermal atomic layer deposition (ALD) as a passivation layer in the crystalline Si

In this paper, Ni silicide formed with a Ni/Er/Ni/TiN structure is proposed, and the thermal stability and electrical properties of the proposed Ni silicide with an Er interlayer in different positions are studied for application to source/drain of MOSFETs. Ni silicide with Ni/Er/Ni/TiN structures showed not only improved thermal stability but also lower sheet resistance than an Er/Ni/TiN structure. Moreover, proposed Ni/Er/Ni/TiN (2/2/ 11/10 nm) structure exhibited great barrier height and low ideality factor similar to the Er/Ni/TiN structure which could reduce the contact resistance between silicide and doped source/drain region. Therefore, proposed silicide using Ni/Er/Ni/TiN (2/2/11/10 nm) structure is promising for MOSFET source/drain due to better thermal stability, low sheet resistance, and excellent electrical properties.

H 2 O or NH 4 OH (5%) precursor pretreatment in the chamber was carried out before the thermal atomic layer deposition (ALD) of an Al 2 O 3 passivation layer on p-type crystal Si. It was found that the density of negative oxide fixed charges significantly increased, the Al-O combination at the interface changed, the Al/O atomic at the interface of Al 2 O 3 /Si decreased, and the effective lifetime increased. The pretreated samples with changes in the Al-O structure at the interface, which made the interface more oxygen-rich, were believed to be the reason for the improvement of the field effect passivation in Al 2 O 3 passivated crystal Si solar cell applications.