2022
DOI: 10.1016/j.ceramint.2022.04.015
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Selenization process in simple spray-coated CIGS film

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Cited by 4 publications
(3 citation statements)
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“…The band gap is the minimum energy electrons need to move from the valence band to the conduction band. In the Cu, In, Ga, and Se chalcopyrite alloy system, the band gap varies from 1.04 eV to 3.5 eV [1], [8], [16]. Based on Figure 3 and Table 1, the band gap of CIGS solar cells with platinum wire and plate has an absorbance peak of 390 nm and a band gap of 2.75 eV.…”
Section: Resultsmentioning
confidence: 96%
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“…The band gap is the minimum energy electrons need to move from the valence band to the conduction band. In the Cu, In, Ga, and Se chalcopyrite alloy system, the band gap varies from 1.04 eV to 3.5 eV [1], [8], [16]. Based on Figure 3 and Table 1, the band gap of CIGS solar cells with platinum wire and plate has an absorbance peak of 390 nm and a band gap of 2.75 eV.…”
Section: Resultsmentioning
confidence: 96%
“…Otherwise, there are non-vacuum methods such as electrodeposition. [6], spin coating [7], and spray coating [8]. Electrodeposition is the most preferred method because it is simple, stable, low cost, does not require vacuum conditions, and has been proven capable of producing CIGS solar cells [9].…”
Section: Introductionmentioning
confidence: 99%
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