Self‐accelerating oxidation on Si(111)7 × 7 surfaces studied by real‐time photoelectron spectroscopy

Abstract

Oxidation at the oxide/Si(111) interface at room temperature (RT) and 550 °C has been investigated by real‐time X‐ray photoelectron spectroscopy. Self‐accelerating interface oxidation is observed in oxidation at RT, but not in oxidation at 550 °C. During self‐acceleration at RT, the component corresponding to strained Si atoms in the second layer below the oxide/Si(111) interface, Siβ, increases significantly. It is suggested that the interface oxidation rate is strongly correlated with the generation of strain at the oxide/Si(111) interface. Furthermore, a self‐accelerating interface oxidation model of Si(111)7 × 7 surfaces that includes the point defect (emitted Si atoms + vacancies) generation is proposed. Copyright © 2014 John Wiley & Sons, Ltd.

Roles of strain and carrier in silicon oxidation

“…Angle-resolved XPS was also employed to measure the depth profile of SiO near the SiO 2 surface to clarify the reaction between SiO and O 2 molecules in the SiO 2 film. 74) In this paper, we review the study of the unified Si oxidation reaction model mediated by point defect generation: The competition between the SiO 2 growth and decomposition, [74][75][76] the phase transitions in the surface oxidation, [77][78][79][80][81][82][83][84][85] the SiO 2 decomposition kinetics, 86,87) the lattice site of the adsorbed O atom, 88,89) the correlation between the SiO 2 growth rate and the SiO 2 decomposition rate, 90) the Si emission kinetics, 72,91) the self-accelerating oxidation, 92) the thermal strain-induced enhancement of dX O /dt, 93) the P O2 dependence of dX O /dt, 94) the temperature and P O2 dependence of dX O /dt during the layer-by-layer oxidation, 95) the oxidation reaction kinetics of the Si 1−x C x alloy layer (x ; 0.1) formed on Si(001) surfaces. 96) This review paper consists of five chapters.…”

“…3.1, the oxidation reaction kinetics on Si(111) surface at RT was observed for six hours to explore the self-accelerating oxidation mechanism. 92) In Sect. 3.2, the soft X-ray irradiation effect on the SiO 2 growth kinetics was examined at RT and 500 °C to clarify the role of the carrier trapping of the defect state in the SiO 2 growth kinetics.…”

“…4.5, the role of the heat of adsorption due to the Si-O bond formation is considered based on the P O2 dependence of dX O /dt 94) and the self-accelerating oxidation. 92) In Sect. 4.6, the role of the carrier trapping at the defect-derived state is elucidated from the experimental results in Sect.…”