Self-aligned passivation on copper interconnection durability against oxidizing ambient annealing

Abstract

Complementary metal-oxide-semiconductor-compatible and self-aligned catalyst formation for carbon nanotube synthesis and interconnect fabrication Low resistance polysilicon interconnects with selfaligned metal

Deposition characteristics of Ti−Si−N films reactively sputtered from various targets in a N2/Ar gas mixture

“…7-9 A number of approaches have been explored to address these problems, such as the development of Cu passivation methods and diffusion barrier materials. [10][11][12][13][14][15][16][17][18][19][20][21][22][23] The study of diffusion barrier materials for their application in ULSI has been more critical. TiN has been widely used as a diffusion barrier material.…”

Thermal annealing of buried Al barrier layers to passivate the surface of copper films

“…4, [13][14][15] The present letter is an attempt to accomplish both surface passivation and diffusion barrier/ adhesion promoter functions in a single process by annealing a thin diffusion barrier/adhesion promoter layer of Al. 1, 6 The principal advantage of Al over refractory metals is the generally lower annealing temperature needed.…”

“…A number of approaches have been investigated for passivation of the exposed surface of copper, including ion implantation, 9,10 formation of surface silicides, 11 treatment with organic inhibitors, 12 annealing bilayer structures, 4, [13][14][15] and doping the copper with metals which can be used to passivate the surface of the copper. 4, 16 -18 The doping with Al or Mg is especially promising.…”

Self aligned passivation of Cu in Cu/Cr, Cu/V and Cu/Ta multilayers

“…Because intermixing or interdiffusion of bulk Cu and Cr or V are either very limited or negligibly small i. e. 0.05 % and 0.1% at 500°C for Cr and V respectively, they cause low variation in Cu resistance for example, about 5.5 pQ-cm/at% for Cr and 5.8 pQ-cm/at% for V [5]. Annealing the samples at temperatures up to 500 "C in non-reactive environments like Ar and N2 caused a linear increase in R(T) with coefficient less than value for bulk i. e. 3.3~10-~/"C in compare with 7~10-~/"C for bulk Cu [6].…”

“…This can be achieved by implantation, alloying top layer, etc [4] [ 5 ] . In the present study we examine the self aligned passivation method as was introduced by Hitoshi Itow et al [ 5 ] . In this method a metallic layer is deposited under the Cu layer.…”