This paper presents ring modulator driver and receiver circuits designed for 3D photonic-electronic integration using inter-wafer connections (IWC), whose parasitic capacitance is expected to be in the order of 15 fF. Both transmitter and receiver can operate with binary and PAM-4 modulation at 10 Gb/s. To the authors knowledge it is the first PAM-4 ring modulator driver being presented. The circuits are designed in AMS 0.35 µm SiGe BiCMOS technology with total power consumptions of 160 mW and 180 mW for transmitter and receiver, respectively. The receiver's sensitivity is -27 dBm for binary and -22 dBm for 4-PAM signals both at a photodiode responsivity of R = 0.9 A/W. A monitor TIA with sensitivity -32 dBm was also designed in order to control the operating point of the ring modulator.