Self-assembled dipoles of <i>o</i>-carborane on gate oxide tuning charge carriers in organic field effect transistors

Chu, Ming; Zhang, Jie; Zeng, Xingwei; Chen, Zefeng; Liu, Danqing; Chen, Han; Xie, Zuowei; Xu, Jianbin; Miao, Qian

doi:10.1039/d1tc02810c

Cited by 6 publications

(2 citation statements)

References 46 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The device achieved high electron mobility of up to 13.9 cm 2 V −1 s −1 . [ 42 ] Overall, the halogenation is an excellent way to improve the semiconductor properties of TIPSTAP.…”

Section: Organic Small‐molecule Semiconductors With High Electron Mob...mentioning

confidence: 99%

Recent Research Progress of Organic Small‐Molecule Semiconductors with High Electron Mobilities

et al. 2023

View full text Add to dashboard Cite

Organic electronics has made great progress in the past decades, which is inseparable from the innovative development of organic electronic devices and the diversity of organic semiconductor materials. It is worth mentioning that both of these great advances are inextricably linked to the development of organic high‐performance semiconductor materials, especially the representative n‐type organic small‐molecule semiconductor materials with high electron mobilities. The n‐type organic small molecules have the advantages of simple synthesis process, strong intermolecular stacking, tunable molecular structure, and easy to functionalize structures. Furthermore, the n‐type semiconductor is a remarkable and important component for constructing complementary logic circuits and p‐n heterojunction structures. Therefore, n‐type organic semiconductors play an extremely important role in the field of organic electronic materials and are the basis for the industrialization of organic electronic functional devices. This review focuses on the modification strategies of organic small molecules with high electron mobility at molecular level, and discusses in detail the applications of n‐type small‐molecule semiconductor materials with high mobility in organic field‐effect transistors, organic light‐emitting transistors, organic photodetectors, and gas sensors.

show abstract

“…The device achieved high electron mobility of up to 13.9 cm 2 V −1 s −1 . [ 42 ] Overall, the halogenation is an excellent way to improve the semiconductor properties of TIPSTAP.…”

Section: Organic Small‐molecule Semiconductors With High Electron Mob...mentioning

confidence: 99%

Recent Research Progress of Organic Small‐Molecule Semiconductors with High Electron Mobilities

et al. 2023

View full text Add to dashboard Cite

show abstract

“…Since charges are extracted from the source electrode and injected into the organic semiconductors, the injection barrier between semiconductor and the electrode strongly affects the contact resistance and thus the device performance of the resulting OTFTs. − In order to form an ideal contact, the lowest unoccupied molecular orbital (LUMO) or the highest occupied molecular orbital (HOMO) should well match with the work function of the source/drain electrodes, preferably Au due to stability reasons, in n-channel or p-channel OTFTs, respectively . By introducing a suitable additional layer such as charge insertion layer (CIL) ,− and functional self-assembled monolayer (SAM) ,− to modify the source/drain electrode via chemisorption or physisorption, the injection barrier can be effectively decreased. The electrode modification is particularly essential in n-channel devices, as the work function of Au (∼5.0 eV) mismatches the LUMO of most electron transporting materials.…”

Section: Introductionmentioning

confidence: 99%

Cross-Linked Interfacial Layer for Enhanced Performance in n-Channel Organic Thin Film Transistors

Wang,

Xu,

Dong

et al. 2024

ACS Appl. Polym. Mater.

View full text Add to dashboard Cite

Interfacial engineering has proven to be important in regulating the performance of optoelectronics. However, immobilized interlayer molecules may diffuse between adjacent layers in devices and induce an inferior electrical performance. In this study, the polyethylenimine ethoxylated (PEIE) modification layer at the source−drain contacts/semiconductor interface was cross-linked with siloxane cross-linking agents (SCAs) to enhance the performance of organic thin film transistors (OTFTs) based on diketopyrrolopyrroletype conjugated polymer (P4FTVT-C32). Our results demonstrate that the improvement of device performance is closely related to the electron-donating ability and the surface energy-modifying capabilities of the functional group on SCAs. Tertiary amino group-containing (N,N-dimethylaminopropyl)trimethoxysilane (NTMS) is in favor of stronger electron-donating ability for higher carrier density and further reduced work function of Au contacts and moderate surface potential for large semiconductor crystalline domains. As a result, OTFTs modified by NTMS-cross-linked PEIE exhibited increased electron mobility to over 7 cm 2 V −1 s −1 from ∼3 cm 2 V −1 s −1 , together with increased on/off ratio by ∼1 order of magnitude as compared to that modified by un-cross-linked PEIE. On the other hand, cross-linking of PEIE interlayer with alkyl-substituted SCA trimethoxy(octyl)silane (TOTS) led to the largest surface tension for largest crystalline domain size, highest alignment degree, and compact stacking of P4FTVT-C32 and thus increased the electron mobility over 5 cm 2 V −1 s −1 . The PEIE interlayer cross-linking strategy was also verified in isoindigo-and naphthalenediimide-based n-channel OTFTs in terms of enhanced electron mobility and on/off ratio. This work highlighted the potential of interlayer cross-linking strategy using functional crosslinkers in enhancing the performance of organic electronics.

show abstract

High Open‐Circuit Voltage Wide‐Bandgap Perovskite Solar Cell with Interface Dipole Layer

Heo,

Prayogo,

Lee

et al. 2024

Small

View full text Add to dashboard Cite

Wide‐bandgap perovskite solar cells (PSCs) with high open‐circuit voltage (Voc) represent a compelling and emerging technological advancement in high‐performing perovskite‐based tandem solar cells. Interfacial engineering is an effective strategy to enhance Voc in PSCs by tailoring the energy level alignments between the constituent layers. Herein, n‐type quinoxaline‐phosphine oxide‐based small molecules with strong dipole moments is designed and introduce them as effective cathode interfacial layers. Their strong dipole effect leads to appropriate energy level alignment by tuning the work function of the Ag electrode to form an ohmic contact and enhance the built‐in potential within the device, thereby improving charge‐carrier transport and mitigating charge recombination. The organic interfacial layer‐modified wide‐bandgap PSCs exhibit a high Voc of 1.31 V (deficit of <0.44 V) and a power conversion efficiency (PCE) of 20.3%, significantly improved from the device without an interface dipole layer (Voc of 1.26 V and PCE of 16.7%). Furthermore, the hydrophobic characteristics of the small molecules contribute to improved device stability, retaining 95% of the initial PCE after 500 h in ambient air.

show abstract

Self-assembled dipoles of o-carborane on gate oxide tuning charge carriers in organic field effect transistors

Abstract: Molecules of 12-o-carboranyldodecylphosphonic acid form a novel self-assembled monolayer (SAM) on alumina, which can effectively tune charge carriers in organic field effect transistors (OFETs) with the assembled dipoles of o−carborane...

Cited by 6 publications

References 46 publications

Recent Research Progress of Organic Small‐Molecule Semiconductors with High Electron Mobilities

Recent Research Progress of Organic Small‐Molecule Semiconductors with High Electron Mobilities

Cross-Linked Interfacial Layer for Enhanced Performance in n-Channel Organic Thin Film Transistors

High Open‐Circuit Voltage Wide‐Bandgap Perovskite Solar Cell with Interface Dipole Layer

Contact Info

Product

Resources

About