Self-assembled Ge quantum dots on Si and their applications

Wang, K.L.; Liu, J.L.; Jin, Geng Bang

doi:10.1016/s0022-0248(01)02212-6

Cited by 50 publications

(28 citation statements)

References 26 publications

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“…More recently, selective growth of islands in the patterned nanoscale region, or pattern guided growth, has been proposed and has attracted considerable attention. Patterned assisted QDs with precisely controlled site placement, size distribution and dot density have been realized in various nanostructures, including buried dislocation networks [43], stripe mesas [44], 2D hexagonal pits array [45] and lithography-based optical interference patterns [46]. Due to ordering of growth patterns, 2D and 3D QD arrays with perfect site periodicity and size distribution can be obtained provided that the growth parameters are optimized.…”

Section: Epitaxial Growth Of Germanium On Siliconmentioning

confidence: 99%

Germanium epitaxy on silicon

2014

Science and Technology of Advanced Materials

118

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With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and compatibility with Si technology, epitaxial Ge-on-Si has become a significant material for optoelectronic device applications. In this paper, we describe recent research progress on heteroepitaxy of Ge flat films and self-assembled Ge quantum dots on Si. For film growth, methods of strain modification and lattice mismatch relief are summarized, while for dot growth, key process parameters and their effects on the dot density, dot morphology and dot position are reviewed. The results indicate that epitaxial Ge-on-Si materials will play a bigger role in silicon photonics.

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Section: Epitaxial Growth Of Germanium On Siliconmentioning

confidence: 99%

Germanium epitaxy on silicon

2014

Science and Technology of Advanced Materials

118

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“…The 4.16% mismatch between the Si and the Ge lattice constants allows nanocrystalline Ge (nc-Ge) dots self-assemble to incorporate into the Si CMOS technology [100]. The smaller bandgap and the light effective masses of carriers allow the nc-Ge dot to considerably enhance the tunneling current through an empty valence band.…”

Section: Silicon Nanocrystals Memory Devices and Other Quantum Dot Mementioning

confidence: 99%

Silicon Nanocrystal Flash Memory

Oda

Huang

2010

Silicon Nanocrystals

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“…These possibilities have made QD like systems to become unusually attractive objects for both fundamental physics research and device applications. These systems have potentials to use for high speed, high efficiency optoelectronics and photonic devices, quantum dot lasers, high density memory or biosensing and biolabeling [3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Quasistationary Electron States for CdTe/ZnTe/CdTe Open Spherical Quantum Dots

Stojanović

Kostić

2010

Acta Phys. Pol. A

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The energy spectra of an electron in open spherical quantum dot (QD) within the effective mass approximation (EMA) and rectangular potential model is presented. Energy structure of quantum dots is important because of their possible applications in electronic and optoelectronic devices. For proper description and interpretation of tunneling processes knowledge of resonant states of quantum dots is necessary. Energy values depend on parameter like size of system and spatial composition. The lifetimes of the quasistationary states are computed within the framework of the scattering S-matrix method. It is shown how core radius and barrier thickness for the CdTe/ZnTe/CdTe example influence electron states and their lifetimes.

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Self-assembled Ge quantum dots on Si and their applications

Cited by 50 publications

References 26 publications

Germanium epitaxy on silicon

Germanium epitaxy on silicon

Silicon Nanocrystal Flash Memory

Quasistationary Electron States for CdTe/ZnTe/CdTe Open Spherical Quantum Dots

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