Multilayer systems, consisting of Au55(PPh3)12Cl6 double layers and SiO2 barrier films of different thickness, have been generated and characterised. The formation of the double layer between the barrier films was carried out by using spin‐coating techniques. For the generation of the SiO2 films, a plasma‐assisted physical vapour deposition (PAPVD) procedure has been applied, based on an anodic plasma arc process. Samples of up to nine cluster/SiO2 combinations have been produced and have been characterised by AFM and SEM. Impedance measurements showed that there is a characteristic thermally activated frequency dependence of the capacitance of the different systems. The cluster layers interact by dipoles formed in the double layers at low frequencies. It has also been shown that multilayer systems with SiO2 films thicker than 15 nm tend to spontaneously crystallise. Furthermore, wetting problems during the spin‐coating processes have been investigated. (© Wiley‐VCH Verlag GmbH & Co. KGaA, 69451 Weinheim, Germany, 2005)