Self-assembled InP quantum dots for red LEDs on Si and injection lasers on GaAs

Zundel, M. K.; Eberl, K.; Jin‐Phillipp, N. Y.; Phillipp, F.; Riedl, Thomas; Fehrenbacher, E.; Hangleiter, A.

doi:10.1016/s0022-0248(98)01540-1

Cited by 12 publications

(6 citation statements)

References 11 publications

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“…Colloidal InP NQDs has only been studied with photoluminescence (PL) and timeresolved PL characterization to date [11,12]. While there have been a few reports of lasing emission from self-assembled InP quantum dots that were epitaxially grown and embedded in (In,Ga,Al)(As,P) layers [13][14][15], ASE and lasing phenomena in colloidal InP NQDs have yet to be observed. In comparison with the epitaxially-grown, pyramid-shaped InP quantum dots of hundred of nanometers in dimensions, the chemically synthesized colloidal InP NQDs exhibit spherical shapes with much smaller dimensions (2-10nm in diameters), which renders them highly efficient for excitonic emission and broader tunability of bandgap energy and emission wavelengths.…”

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confidence: 99%

Lasing from colloidal InP/ZnS quantum dots

et al. 2011

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High-quality InP/ZnS core-shell nanocrystal quantum dots (NQDs) were synthesized as a heavy-metal-free alternative to the gain media of cadmium-based colloidal nanoparticles. Upon UV excitation, amplified spontaneous emission (ASE) and optical gain were observed, for the first time, in close-packed InP/ZnS core-shell NQDs. The ASE wavelength can be selected by tailoring the nanocrystal size over a broad range of the spectrum. Moreover, the optical gain profile of InP/ZnS NQDs was matched to the second order feedback of holographic polymer-dispersed liquid crystal gratings, leading to the very first demonstration of an optically-pumped, nanocrystal laser based on InP/ZnS core-shell NQDs.

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confidence: 99%

Lasing from colloidal InP/ZnS quantum dots

et al. 2011

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“…MBE (molecular beam epitaxy) [287][288][289][290] or MOCVD (metal organic chemical vapor deposition) [291]. Examples of quantum dot lasers include InGaAs [287], InAs [289], AlInAs [288,290], and InP [292]. Stimulated emission has also been observed in GaN quantum dots by optical pumping [291].…”

Section: Photonics and Solid State Lightingmentioning

confidence: 99%

“…Stimulated emission has also been observed in GaN quantum dots by optical pumping [291]. The lasing action or stimulated emission has been observed mostly at low temperature [290,292]. However, some room temperature lasing has also been achieved [287,288].…”

Section: Photonics and Solid State Lightingmentioning

confidence: 99%

Optical and Dynamic Properties of Undoped and Doped Semiconductor Nanostructures

Grant¹,

Zhang²

2008

Annual Review of Nano Research

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This chapter provides an overview of some recent research activities on the study of optical and dynamic properties of semiconductor nanomaterials. The emphasis is on unique aspects of these properties in nanostructures as compared to bulk materials.Linear, including absorption and luminescence, and nonlinear optical as well as dynamic properties of semiconductor nanoparticles are discussed with focus on their dependence on particle size, shape, and surface characteristics. Both doped and undoped semiconductor nanomaterials are highlighted and contrasted to illustrate the use of doping to effectively alter and probe nanomaterial properties.Some emerging applications of optical nanomaterials are discussed towards the end of the chapter, including solar energy conversion, optical sensing of chemicals and biochemicals, solid state lighting, photocatalysis, and photoelectrochemistry.2

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“…Thus growth of III-V nanostructures specially QDs on Si has been practiced by various groups around the world [18][19][20][21]. Earlier Zundel et al [22] deposited InP QDs on Si substrates by MBE to fabricate LED. In this study, the authors used GaInAs/GaAs buffer layer prior to InP QD growth.…”

Section: Introductionmentioning

confidence: 99%

OMVPE growth of indium phosphide nano-structures on silicon for monolithic integration

Halder

Mukherjee

Kundu

et al. 2013

2013 International Conference on Microwave and Photonics (ICMAP)

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The work deals with the growth kinetics of III-V nanostructures, particularly InP quantum dots (QDs) on Si substrates along with its growth rate. Comparing the experimentally obtained results with the existing theoretical model, the growth regime of such heterogeneous nucleation has been predicted. The estimation of the height of the QDs has been made from the dot height distribution of Atomic Force Microscopy, and it has been related to the growth rate. The experimental results establish the growth regime as mass transfer limited. Fitting the experimental data, the growth rates have been found to be in the mass transfer limited region. Efforts have been made to predict any anomaly of the growth rate at higher temperature.

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Self-assembled InP quantum dots for red LEDs on Si and injection lasers on GaAs

Cited by 12 publications

References 11 publications

Lasing from colloidal InP/ZnS quantum dots

Lasing from colloidal InP/ZnS quantum dots

Optical and Dynamic Properties of Undoped and Doped Semiconductor Nanostructures

OMVPE growth of indium phosphide nano-structures on silicon for monolithic integration

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