Self-Assembled Monolayers of CdSe Nanocrystals on Doped GaAs Substrates

Marx, Eike; Ginger, David S.; Walzer, Karsten; Stokbro, Kurt

doi:10.1021/nl025669d

Cited by 31 publications

(13 citation statements)

References 22 publications

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“…In particular, we identified only one published report with (n, k) values of CdSe QDs with ~4 nm diameter, comparable to the size of our prepared QDs. In that report (n, k) values were studied by spectroscopic ellipsometry 14 and are reproduced in Fig. 2 from a digitalization of data published in Ref.…”

Section: Introductionmentioning

confidence: 99%

Light trapping considerations in self-assembled ZnO nanorod arrays for quantum dot sensitized solar cells

et al. 2014

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We study light absorption in ZnO nanorod arrays sensitized with CdSe quantum dots as one of the factors affecting solar cell performance in need of improvement given their current performance well below expectations. Light trapping in nanorod arrays (NRAs) as it relates to array density and length as well as quantum dot (QD) loading is studied using the Finite Difference Time Domain model. It is shown that light absorption in such solar cell architecture is a sensitive function of the morphological dimensions and that a higher NRA density does not necessarily correspond to large absorption in the solar cell. Instead, light trapping efficiency depends significantly on the array density, QD axial distribution and refractive index contrast between NR and QDs thus suggesting strategies for improved quantum dot solar cell (QDSC) fabrication. In addition, we present experimental data showing dramatic improvement in photo conversion efficiency performance for relatively short ZnO NRAs (~1 μm) of low NRA density, but whose efficiency improvement can not be solely explained based on our current light trapping estimates from the numerical simulations.

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Section: Introductionmentioning

confidence: 99%

Light trapping considerations in self-assembled ZnO nanorod arrays for quantum dot sensitized solar cells

et al. 2014

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“…The motivation for surface passivation in NC‐based FETs, as reported here, is that it forms a potential platform for NC assembly. This motivation is supported by the reports that SAMLs are able to assemble NCs, via coordination and electrostatic interactions, into closed‐packed configuration 30–32…”

Section: Resultsmentioning

confidence: 82%

Interface Modifications of InAs Quantum‐Dots Solids and their Effects on FET Performance

Soreni-Harari

Mocatta

Zimin

et al. 2010

Adv Funct Materials

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InAs nanocrystals field‐effect transistors with an ON/OFF ratio of 105 are reported. By tailoring the interface regions in the active layer step‐by‐step, the evolution of the ON/OFF ratio can be followed from approximately 5 all the way to around 105. The formation of a semiconducting solid from colloidal nanocrystals is achieved through targeted design of the nanocrystal–nanocrystal interaction. The manipulation characteristics of the nanocrystal interfaces include the matrix surrounding the inorganic core, the interparticle distance, and the order of nanocrystals in the 3D array. Through careful analysis of device characteristics following each treatment, the effect of each on the physical properties of the films are able to be verified. The enhanced performance is related to interparticle spacing, reduction in sub‐gap states, and better electronic order (lower σ parameter). Films with enhanced charge transport qualities retain their quantum‐confined characteristics throughout the procedure, thus making them useful for optoelectronic applications.

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“…The anticipated structure after the Hexanedithiol is deposited is a monolayer that presents a thiol group at its surface. CdSe quantum dots are known to bind to thiol endgroups 12 . Subsequently exposing the substrate to a solution containing CdSe quantum dots results in a monolayer being deposited on the surface 12,13 .…”

Section: Fabrication and Characterizationmentioning

confidence: 99%

A resonant tunneling CdSe quantum dot photodetector for spectral resolution in the visible region

Dindar

Therrien

2007

SPIE Proceedings

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A spectrally resolving quantum dot photodetector has been designed and fabricated which is able to discriminate wavelengths in the visible region. The device consists of a monolayer of 5.4 nm diameter CdSe nanoparticles that have been sandwiched between two organic layers of Hexanedithiol, all on a highly doped p-type InP substrate. A thin, semitransparent layer of gold deposited on the top of the device made the second contact. The two layers of Hexanedithiol act as tunnel barriers for electrons inside the nanoparticles. Changing the bias voltage across the device, causes specific energy states inside the quantum dot to align with the conduction band edge of the InP. Any excited carriers in these energy levels will tunnel trough the organic barrier and be collected as photocurrent. By changing the wavelength of the incident light, the device shows a wavelength dependent I-V spectrum with jumps in the current at specific voltages. Comparing which peaks in different wavelengths are present, shows that the device has a spectrally dependent response to the incident light.

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Self-Assembled Monolayers of CdSe Nanocrystals on Doped GaAs Substrates

Cited by 31 publications

References 22 publications

Light trapping considerations in self-assembled ZnO nanorod arrays for quantum dot sensitized solar cells

Light trapping considerations in self-assembled ZnO nanorod arrays for quantum dot sensitized solar cells

Interface Modifications of InAs Quantum‐Dots Solids and their Effects on FET Performance

A resonant tunneling CdSe quantum dot photodetector for spectral resolution in the visible region

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