Area-selective atomic layer deposition
(AS-ALD) is attracting increasing
interest, but the process usually requires substrate materials with
substantially different chemical properties. We introduce a process
that expands the application to more general material systems by demonstrating
AS-ALD on patterns with chemically similar materials. The substrate
materials investigated are Al2O3, HfO2, TiO2, Ta2O5, and SiO2. By taking advantage of differential reactivity of octadecylphosphonic
acid (ODPA) self-assembled monolayers (SAMs) on the various dielectric
surfaces, we use the SAMs as ALD inhibitors to achieve selective ALD
of both ZnO and Al2O3. With SiO2 as
the growth surface, the best blocking performance against ZnO and
Al2O3 ALD is achieved on ODPA-protected Al2O3 and HfO2 substrates which reach selectivities
above 0.9 after 14 nm ZnO and 2.5 nm Al2O3 growth,
respectively, on control Si wafers. Selectivity between different
metal oxides is also explored, including HfO2/Al2O3 patterns. With the optimization of solvent and ODPA
SAM deposition time, selectivity above 0.9 can be achieved for at
least 4 nm ZnO ALD on a HfO2 growth surface, while preventing
growth on an Al2O3 nongrowth surface. This study
introduces a strategy for achieving more general selectivity and opens
up the possibility for new applications in next generation electronic
devices.