Self-assembled ordered arrays of nanoscale germanium Esaki tunnel diodes

Zhu, Kaigui; Wu, Wei; Shao, Qinghui; Zhao, Dongning; Lu, Yongfeng; Ianno, N. J.

doi:10.1063/1.3583673

Cited by 4 publications

(1 citation statement)

References 14 publications

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“…Various material stacks have been used in Esaki diodes, including Si, Ge, SiGe, III-V, and their heterostructures [59][60][61][62][63][64][65]. Peak current density up to 2.2 MA cm −2 has been demonstrated in Esaki diodes based on InAs/GaSb heterojunctions [61].…”

Section: Esaki Diodesmentioning

confidence: 99%

Nanoscale electronic devices based on transition metal dichalcogenides

et al. 2019

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Two-dimensional (2D) transition metal dichalcogenides (TMDs) have very versatile chemical, electrical and optical properties. In particular, they exhibit rich and highly tunable electronic properties, with a bandgap that spans from semi-metallic up to 2 eV depending on the crystal phase, material composition, number of layers and even external stimulus. This paper provides an overview of the electronic devices and circuits based on 2D TMDs, such as Esaki diodes, resonant tunneling diodes (RTDs), logic and RF transistors, tunneling field-effect transistors (TFETs), static random access memories (SRAMs), dynamic RAM (DRAMs), flash memory, ferroelectric memories, resistitive memories and phase-change memories. We address the basic device principles, the advantages and limitations of these 2D electronic devices, and our perspectives on future developments.

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Section: Esaki Diodesmentioning

confidence: 99%

Nanoscale electronic devices based on transition metal dichalcogenides

et al. 2019

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Diode rectification and negative differential resistance of dipyrimidinyl–diphenyl molecular junctions

Gong

2013

Organic Electronics

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Esaki tunnel diodes based on vertical Si-Ge nanowire heterojunctions

Fung¹,

Chen²,

Lü³

2011

Applied Physics Letters

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High performance Esaki tunnel diodes [L. Esaki, Phys. Rev. 109, 603 (1958)] based on small-diameter Ge/Si core/shell nanowires vertically grown on Si substrates are demonstrated. The devices exhibit pronounced negative differential resistance with peak-to-valley current ratio of 2.75, high peak current density of 2.4 kA/cm2, and high tunneling current density of 237 kA/cm2 at 1 V reverse bias, all obtained at room temperature. The peak current is found to increase with temperature and the data can be well explained with a band-to-band tunneling model. These results suggest that Si-Ge heterojunction with low defect density can be obtained for device applications such as tunnel diodes and tunnel field-effect transistors.

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Self-assembled ordered arrays of nanoscale germanium Esaki tunnel diodes

Cited by 4 publications

References 14 publications

Nanoscale electronic devices based on transition metal dichalcogenides

Nanoscale electronic devices based on transition metal dichalcogenides

Diode rectification and negative differential resistance of dipyrimidinyl–diphenyl molecular junctions

Esaki tunnel diodes based on vertical Si-Ge nanowire heterojunctions

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