Self-Assembly Based Air-Gap Integration

Ponoth, S.; Horak, D.; Nitta, Shuhei; Colburn, Matthew; Breyta, Gregory; Huang, E.; Sucharitaves, Jeanne Tania; Landis, Howard; Lisi, Anthony J.; Liu, Xiao; Vo, Tuan; Johnson, Richard P.; Li, Wai-Kin; Purushothaman, S.; Cohen, S.; Hu, C.‐K.; Kim, Ho-Cheol; Clevenger, L. A.; Fuller, Nicholas; Nogami, Takeshi; Spooner, T.; Edelstein, Dan

doi:10.1149/ma2008-02/28/2074

Cited by 6 publications

(3 citation statements)

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“…IBM has explored the application of block copolymer nanostructures to fabricate air-gap structures. Figure schematically illustrates the process sequence . An organic diblock copolymer with cylindrical morphology was used to form dense via-like nanopatterns atop a hard mask silicon oxide layer.…”

Section: Applications To Nanofabricationmentioning

confidence: 99%

Section: Applications To Nanofabricationmentioning

confidence: 99%

“…Figure 44 schematically illustrates the process sequence. 156 An organic diblock copolymer with cylindrical morphology was used to form dense via-like nanopatterns atop a hard mask silicon oxide layer. To ensure that the cylinders for the minority phase were oriented vertically, the silicon oxide layer was first coated with a random brush polymer layer engineered to have the same affinity for both blocks of the diblock polymer.…”

Section: Interconnects: Air Gap Fabricationmentioning

confidence: 99%

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Block Copolymer Based Nanostructures: Materials, Processes, and Applications to Electronics

2009

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Section: Applications To Nanofabricationmentioning

confidence: 99%

Section: Applications To Nanofabricationmentioning

confidence: 99%

Section: Interconnects: Air Gap Fabricationmentioning

confidence: 99%

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Block Copolymer Based Nanostructures: Materials, Processes, and Applications to Electronics

2009

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The driving force for development of IC and system in future: Reducing the power consumption and improving the ratio of performance to power consumption

Wang

2011

Sci. China Inf. Sci.

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With the development of information technology, integrated circuits (IC) and system which target high performance and low power consumption have widely penetrated to all the aspects of national economy, national defense construction and people's life. With the continuous increase in IC integration density, the power consumption is becoming the limiting factor. It turns out that the driving force of the future IC and system development is the reduction of the power consumption and improvement of the performance/power ratio. The Moore's Law is inherently the law for the technology and economic development, and has served as the guideline of the IC development for half a century. However, with the scaling down of IC feature size and the corresponding increased integration density, it is progressively approaching the physical limitation. Moore's Law will gradually complete its historic mission and it will be replaced by a law of reducing the power consumption while ensuring the performance requirements for IC, SoC and SiP performance, law of improving the performance/power ratio. This paper will discuss the related research topics on Green micro/nanoelectronics, including low-power design, novel low-power devices, manufacturing processes for low power applications and related micro/nano electromechanical systems. CitationWang Y Y. The driving force for development of IC and system in future: Reducing the power consumption and improving the ratio of performance to power consumption. Sci China Inf Sci, 2011, 54: 915-935,

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Copper chemical mechanical planarization (Cu CMP) challenges in 22nm back-end-of-line (BEOL) and beyond

Krishnan

Lofaro

2016

Advances in Chemical Mechanical Planarization (CMP)

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Self-Assembly Based Air-Gap Integration

Abstract: not Available.

Cited by 6 publications

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Block Copolymer Based Nanostructures: Materials, Processes, and Applications to Electronics

Block Copolymer Based Nanostructures: Materials, Processes, and Applications to Electronics

The driving force for development of IC and system in future: Reducing the power consumption and improving the ratio of performance to power consumption

Copper chemical mechanical planarization (Cu CMP) challenges in 22nm back-end-of-line (BEOL) and beyond

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