Self-assembly of quantum dots in a thin epitaxial film wetting an elastic substrate

Levine, M. S.; Golovin, A. A.; Davis, Stephen H.; Voorhees, Peter W.

doi:10.1103/physrevb.75.205312

Cited by 58 publications

(70 citation statements)

References 42 publications

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“…These choices are fairly close to those reported by Jaccodine [39]. The values for the (100) interface are also close to those chosen by Levine et al [41]. In addition, the (110) and (111) facets have lower energy than the (100) facet, which is also true for Si and Ge.…”

Section: D Islandssupporting

confidence: 73%

Kinetic Monte Carlo simulation of heteroepitaxial growth: Wetting layers, quantum dots, capping, and nanorings

Schulze

Smereka

2012

Phys. Rev. B

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A new kinetic Monte Carlo algorithm that efficiently accounts for elastic strain is presented and applied to study various phenomena that take place during heteroepitaxial growth. For example, it is demonstrated that faceted quantum dots occur via the layer-by-layer nucleation of pre-pyramids on top of a critical layer with faceting occurring by anisotropic surface diffusion. It is also shown that the dot growth is enhanced by the depletion of the critical layer which leaves behind a wetting layer. Capping simulations provide insight into the mechanisms behind dot erosion and ring formation. The algorithm used for the simulations presented here is based on the observation that adatom and dimer motion is essentially decoupled from the elastic field. This is exploited by decomposing the film into two parts: the weakly bonded portion and the strongly bonded portion. The weakly bonded portion is taken to evolve independent of the elastic field. In this way the elastic field need only be updated infrequently. Extensive validation reveals that there is little loss of fidelity but the algorithm is fifteen to twenty times faster.

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Section: D Islandssupporting

confidence: 73%

Kinetic Monte Carlo simulation of heteroepitaxial growth: Wetting layers, quantum dots, capping, and nanorings

Schulze

Smereka

2012

Phys. Rev. B

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“…20, the partial differential equation ͑PDE͒-based model is developed, which allows to predict the wavelength of the fastest growing cosinelike perturbation of the film surface ͑also called the normal perturbation͒, assuming surface diffusion and the two-layer wetting potential. [20][21][22][23][24] The model also enables computation of the dynamical, faceted morphologies. Such computations are performed for the normal perturbation and they demonstrate the stabilizing impact of the surface-energy anisotropy on dewetting dynamics.…”

Section: Recent Experimentsmentioning

confidence: 99%

Morphologies and kinetics of a dewetting ultrathin solid film

Khenner

2008

Phys. Rev. B

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The surface evolution model based on a geometric partial differential equation is used to numerically study the kinetics of dewetting and the dynamic morphologies for the localized pinhole defect in the surface of an ultrathin solid film with the strongly anisotropic surface energy. Depending on the parameters such as the initial depth and width of the pinhole, the strength of the attractive substrate potential and the strength of the surface-energy anisotropy, the pinhole may either extend to the substrate and thus rupture the film, or evolve to the quasiequilibrium shape while the rest of the film surface undergoes a phase separation into a hill-and-valley structure followed by coarsening. Emergence of the quasiequilibrium shape and the termination of a dewetting are associated with the faceting of the pinhole tip. Overhanging ͑nongraph͒ morphologies are possible for deep, narrow ͑slitlike͒ pinholes.

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“…the formation of a single island [119,186,189,195]. This feature is inherent to isotropic islands, for which a continuum of island shapes is allowed [196], and does not hold when faceted structures are considered (see Section 4.2).…”

Section: Coarsening Dynamicsmentioning

confidence: 99%

“…Indeed, ab initio calculations for Ge/Si(001) [45,183,184] have shown that the surface energy density of the film undergoes an exponential decay from the substrate value (γ of Si) to the one expected for the thick-film limit (γ of Ge), within 3-5 MLs from the interface. A γ (h) function fitting such a behaviour has been introduced in the evolution equations by Chiu and Gao [185] and others [119,186]. Smooth transitions between substrate and film properties through a small, finite region at the interface have also been considered [118,175,176] and represent the natural choice when considering diffuse-interface models [141,165,168].…”

Section: Wetting Effectsmentioning

confidence: 99%

Continuum modelling of semiconductor heteroepitaxy: an applied perspective

Bergamaschini

Salvalaglio

Backofen

et al. 2016

Advances in Physics: X

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Semiconductor heteroepitaxy involves a wealth of qualitatively different, competing phenomena. Examples include threedimensional island formation, injection of dislocations, mixing between film and substrate atoms. Their relative importance depends on the specific growth conditions, giving rise to a very complex scenario. The need for an optimal control over heteroepitaxial films and/or nanostructures is widespread: semiconductor epitaxy by molecular beam epitaxy or chemical vapour deposition is nowadays exploited also in industrial environments. Simulation models can be precious in limiting the parameter space to be sampled while aiming at films/nanostructures with the desired properties. In order to be appealing (and useful) to an applied audience, such models must yield predictions directly comparable with experimental data. This implies matching typical time scales and sizes, while offering a satisfactory description of the main physical driving forces. It is the aim of the present review to show that continuum models of semiconductor heteroepitaxy evolved significantly, providing a promising tool (even a working tool, in some cases) to comply with the above requirements. Several examples, spanning from the nanometre to the micron scale, are illustrated. Current limitations and future research directions are also discussed.

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Self-assembly of quantum dots in a thin epitaxial film wetting an elastic substrate

Cited by 58 publications

References 42 publications

Kinetic Monte Carlo simulation of heteroepitaxial growth: Wetting layers, quantum dots, capping, and nanorings

Kinetic Monte Carlo simulation of heteroepitaxial growth: Wetting layers, quantum dots, capping, and nanorings

Morphologies and kinetics of a dewetting ultrathin solid film

Continuum modelling of semiconductor heteroepitaxy: an applied perspective

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