Self-biased wavelength selective photodetection in an n-IGZO/p-GeSe heterostructure by polarity flipping

Abstract

Transparent semiconductor oxides with two-dimensional (2D) heterostructure have been extensively studied as new materials for thin-film transistors and photosensors due to their remarkable photovoltaic characteristics, making them useful for newly...

Emerging trends in van der Waals 2D TMD heterojunction bipolar transistors

“…[26][27][28][29][30][31] These three characteristics set them apart from the traditional 3D bulk materials, which are causing increased interest in them. 12,13,15,[32][33][34][35][36][37] Weak vdW interactions in 2D TMDs allow them to be naturally thin and have a surface that is free of dangling bonds, which allows them to build functionalized heterostructures regardless of a lattice mismatch. 38 2D TMDs have a sharp interface and no dangling bonds, so they can solve problems, such as atomic diffusion and dislocation propagation.…”

Emerging Trends in 2D Flexible Electronics

“…[36][37][38][39][40][41] These three traits set them apart from conventional 3D bulk materials, which is why more people are expressing interest in them. [42][43][44][45][46][47][48][49][50][51] In spite of a lattice mismatch, weak vdW interactions in 2D TMDs enable them to be naturally thin and have a surface free of dangling bonds, enabling them to build functionalized heterostructures. [52,53] As a result of their sharp interface and lack of dangling bonds, 2D TMDs are able to address problems like atomic diffusion and dislocation propagation.…”

Recent advances in TMD interfaces with seamless contacts

“…18,25–29 Because of this, they have been the focus of a lot of research in field-effect transistors (FETs) and other nanodevices that use FETs. 30–36…”

“…18,[25][26][27][28][29] Because of this, they have been the focus of a lot of research in field-effect transistors (FETs) and other nanodevices that use FETs. [30][31][32][33][34][35][36] High-performance FET devices cannot be made directly from MX 2 s due to the high resistance to contact between the MX 2 s and the metal substrate. 34,37,38 As a result, one of the most important challenges that must be met is lowering the resistance to contact between the MX 2 s and the metal substrate.…”