Self-Catalyzed GaAsP Nanowires Grown on Silicon Substrates by Solid-Source Molecular Beam Epitaxy

Zhang, Yunyan; Aagesen, Martin; Holm, Jeppe V.; Jørgensen, Henrik Ingerslev; Wu, Jiang; Liu, Huiyun

doi:10.1021/nl401981u

Cited by 88 publications

(134 citation statements)

References 46 publications

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“…Later, this technique has also been demonstrated in MBE growth of GaAsSb [68,69], InAs [70], InAsSb [71] NWs, CBE growth of GaAs [72], InGaAs [73], InSb [74] NWs, and MOCVD growth of GaAs [75,76], GaAsP [77], InP [78,79], InPSb [80], and InSb [81] NWs.…”

Section: Nw Growth Mechanismsmentioning

confidence: 99%

Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography

et al. 2014

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This thesis deals with the growth of GaAs nanowires (NWs) by molecular beam epitaxy (MBE) using vapor-liquid-solid method on various substrates including GaAs(111)B, Si(111) and graphene. The growth of the NWs on GaAs substrates was carried out by Au-catalyzed technique, whereas the growths on Si and graphene substrates were carried out using self-catalyzed technique that has been the main focus of this thesis. The long-term goal of this work was to produce p-n radial junction GaAs NWs for solar cell applications.Necessary conditions were established for obtaining vertical self-catalyzed GaAs NWs on Si(111), which is reproducible from run-to-run. One of the major issues in these NWs grown by both Au-and self-catalyzed techniques is their crystal structure. The Au-catalyzed GaAs NWs usually adopt a wurtzite (WZ) crystal phase, whereas the self-catalyzed NWs a zinc blende (ZB) phase. However, in both the cases the NWs contain stacking faults, rotational twins or/and a mixed crystal phase. The ZB and WZ phases show different optical properties, and one phase might be favored over other for certain applications. Therefore the crystal phase was controlled within single NWs by tuning the V/III ratio and introducing GaAsSb inserts. The change of the crystal phases was correlated with the change in the contact angle of the Ga droplet.Since the discovery of graphene, an ultra-thin two-dimensional material, the research on graphene has become an active field in recent years due to its remarkable properties including excellent electrical and thermal conductivities, mechanical strength and flexibility, and optical transparency. By growing the semiconductor NWs on graphene, a completely new hybrid system can be envisioned where the unique properties of both NWs and graphene can be utilized. Therefore we established a method for the growth of semiconductor NWs on graphene by demonstrating epitaxial growth of vertical GaAs and InAs NWs on different graphitic substrates.Core-shell heterostructure, doping, optical properties, and position controlled growth of self-catalyzed GaAs NWs were investigated. Growth of GaAs/GaAsSb coreshell NWs where the Sb content was tuned from about 10% -70% was studied. The effect of growth temperature and the Sb flux on the morphology of GaAsSb shell was investigated. In addition, by utilizing the core-shell geometry where the shell copies the crystal phase of the core, WZ phase of GaAsSb was demonstrated. Successful p-type doping of GaAs core using Be as dopant, and n-type doping of GaAs shell using Si and Te as dopants were achieved. To investigate the optical properties, GaAs/AlGaAs coreshell NWs were grown with different V/III ratios during the core growth. The NWs grown with high V/III ratio, despite containing a higher density of twinned ZB and WZ GaAs with SFs, were found to have superior optical quality as compared to the NWs grown with low V/III ratio that contain pure ZB GaAs. The observed V/III ratio dependent optical quality was correlated to the intrinsic defects such as As vac...

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Section: Nw Growth Mechanismsmentioning

confidence: 99%

Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography

et al. 2014

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“…Although the successful integration of III–V NWs on silicon has been demonstrated using both self-catalyzed growth and selective area epitaxy, 16−18 reports of crystal phase purity are rare for binary materials 19,20 and absent in the case of ternaries. 21−24 …”

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confidence: 99%

Gold-Free Ternary III–V Antimonide Nanowire Arrays on Silicon: Twin-Free down to the First Bilayer

et al. 2013

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With the continued maturation of III–V nanowire research, expectations of material quality should be concomitantly raised. Ideally, III–V nanowires integrated on silicon should be entirely free of extended planar defects such as twins, stacking faults, or polytypism, position-controlled for convenient device processing, and gold-free for compatibility with standard complementary metal–oxide–semiconductor (CMOS) processing tools. Here we demonstrate large area vertical GaAsxSb1–x nanowire arrays grown on silicon (111) by molecular beam epitaxy. The nanowires’ complex faceting, pure zinc blende crystal structure, and composition are mapped using characterization techniques both at the nanoscale and in large-area ensembles. We prove unambiguously that these gold-free nanowires are entirely twin-free down to the first bilayer and reveal their three-dimensional composition evolution, paving the way for novel infrared devices integrated directly on the cost-effective Si platform.

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“…In addition, the radial strain relaxation in nanowires allows the growth of heterostructures whose constituent compounds are relatively lattice mismatched, hence providing a distinctive flexibility in terms of material composition. More recently, the growth of semiconductor nanowires without the use of heterocatalytic nanoparticle seeds has been the subject of intense research [1][2][3][4][5][6][7], motivated by the potential of direct integration of nanowire devices with the established silicon CMOS technology.…”

Section: Introductionmentioning

confidence: 99%

Observation of coherent electron transport in self-catalysed InAs and InAs1–xSbx nanowires grown on silicon

Sourribes

Isakov

Panfilova

et al. 2017

Journal of Applied Physics

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We report the observation of phase coherent transport in catalyst-free InAs and InAs1−xSbx nanowires grown by molecular beam epitaxy on silicon (111) substrates. We investigate three different methods to gain information on the phase coherence length of the nanowires: first through the study of universal conductance fluctuations as a function of both magnetic field and gate voltage and then through localisation effects. The analysis of these different quantum effects gave consistent results and a phase-coherence length in the hundred nanometre range was extracted for all nanowires below 10 K. This demonstrates the potential of catalyst-free nanowires as building blocks for future quantum electronics devices directly integrated with silicon circuits.

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Self-Catalyzed GaAsP Nanowires Grown on Silicon Substrates by Solid-Source Molecular Beam Epitaxy

Cited by 88 publications

References 46 publications

Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography

Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography

Gold-Free Ternary III–V Antimonide Nanowire Arrays on Silicon: Twin-Free down to the First Bilayer

Observation of coherent electron transport in self-catalysed InAs and InAs1–xSbx nanowires grown on silicon

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