Self-consistent estimations of heating in stacks of intrinsic Josephson junctions

Verreet, Bregt; Sergeant, N.; Negrete, D.M.; Torstensson, Mattias; Winkler, Dag; Yurgens, A.

doi:10.1088/0953-2048/20/2/s11

Cited by 10 publications

(9 citation statements)

References 14 publications

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“…Consequently, the product I c R N drops with temperature reducing the voltage on the IV's. The increase of the crystal temperature was measured by several methods 32, 45.…”

Section: Bi‐2212mentioning

confidence: 99%

Resistive memory switching in layered oxides: A_nB_nO_3n+2 perovskite derivatives and Bi₂Sr₂CaCu₂O_8+δ high‐T_c superconductor

Koval

Chowdhury

Jin

et al. 2011

Physica Status Solidi (a)

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Resistive memory switching was investigated in titanates and niobates of the type AnBnO3n+2 and in the high‐Tc superconductor Bi2Sr2CaCu2O8+δ. We studied the switching by current injection perpendicular to the layers. Both dc and pulsed measurements were performed. Out‐of‐plane transport properties were investigated by measurements of the resistance and current–voltage characteristics (IVs) vs. temperature for different resistive states. The critical temperature of superconducting transition and the critical current of intrinsic Josephson junctions were also analyzed for different resistive states in Bi2Sr2CaCu2O8+δ. The resistive memory switching was explained in terms of doping of the conducting layers, which is induced by trapped charges in the insulating layers. The charged insulating layers act as a floating gate and reduce or increase the carrier concentration in the conducting layers, respectively. We found that all studied materials demonstrate a different type of non‐persistent resistive switching at low temperatures. This type of switching shows up in a specific form of current–voltage characteristics with a pronounced back‐bending often called s‐shaped IV. Both types of resistive switching with and without memory effect were analyzed in terms of electron overheating. We examine the role of hot electrons and discuss additional factors, which might lead to persistent resistive states.

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“…Consequently, the product I c R N drops with temperature reducing the voltage on the IV's. The increase of the crystal temperature was measured by several methods 32, 45.…”

Section: Bi‐2212mentioning

confidence: 99%

Resistive memory switching in layered oxides: A_nB_nO_3n+2 perovskite derivatives and Bi₂Sr₂CaCu₂O_8+δ high‐T_c superconductor

Koval

Chowdhury

Jin

et al. 2011

Physica Status Solidi (a)

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“…33,34 For instance, Verreet et al 33 estimated that R th ∼160 K/mW at P dis ∼150 µW for the mesa-type IJJs. This suggests that ∆T h for sample M is ∼0.14 K for P dis =0.9 µW in our measurements at the lowest temperature.…”

Section: B Properties Of the Second Switchmentioning

confidence: 99%

Comparative study of macroscopic quantum tunneling inBi2Sr2CaCu2Oyintrinsic Josephson junctions wi

et al. 2009

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We investigated macroscopic quantum tunneling (MQT) of Bi2Sr2CaCu2Oy intrinsic Josephson junctions (IJJs) for two device structures. One is a small mesa, which is a few nanometers thick with only two or three IJJs, and the other is a stack of a few hundred IJJs in a narrow bridge structure. The experimental results regarding the switching current distribution for the first switch from the zero-voltage state were in good agreement with the conventional theory for a single Josephson junction, indicating that the crossover temperature from thermal activation to the MQT regime for the former device structure was similar to that for the latter device structure. Together with the observation of multiphoton transitions between quantized energy levels in the MQT regime, these results strongly suggest that the observed MQT behavior is intrinsic to a single IJJ in high-Tc cuprates and is independent of the device structure. The switching current distribution for the second switch from the first resistive state, which was carefully distinguished from the first switch, was also compared with respect to the two device structures. In spite of the differences between the heat transfer environments, the second switch exhibited a similar temperature-independent behavior for both devices up to a much higher temperature than the crossover temperature for the first switch. We argue that this cannot be explained in terms of self-heating caused by dissipative currents after the first switch. As possible candidates for this phenomenon, the MQT process for the second switch and the effective increase of the electronic temperature due to the quasiparticle injection are discussed.

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“…In addition, there is no thick glue between the crystal and the substrate, which is also favorable to the heat diffusion. However, the real situation of the heat diffusion is more complicated, which involves not only the thermal link between the substrate and IJJs but also the electrode-IJJs contact, as well as the circumstance of the IJJs stack [11]. More study need to be done to understand the real heating diffusion of IJJs.…”

Section: Resultsmentioning

confidence: 99%

Exfoliated Thin $\hbox{Bi}_{2}\hbox{Sr}_{2} \hbox{CaCu}_{2}\hbox{O}_{8 + \delta}$ Single Crystal and Its Intrinsic Josephson Junctions

Wang

You

Yang

et al. 2012

IEEE Trans. Appl. Supercond.

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Thin Bi 2 Sr 2 CaCu 2 O 8+δ (Bi-2212) single crystals with the typical thicknesses of 20-200 nm are prepared with mechanical exfoliation, which can be firmly attached to a substrate by van der Waals and/or capillary force instead of using any glue. The thin Bi-2212 single crystals are interesting for superconducting device fabrication and applications as well as the study of low-dimension superconductivity. A stack of intrinsic Josephson junctions including eight junctions is demonstrated.

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Self-consistent estimations of heating in stacks of intrinsic Josephson junctions

Cited by 10 publications

References 14 publications

Resistive memory switching in layered oxides: A_nB_nO_3n+2 perovskite derivatives and Bi₂Sr₂CaCu₂O_8+δ high‐T_c superconductor

Resistive memory switching in layered oxides: A_nB_nO_3n+2 perovskite derivatives and Bi₂Sr₂CaCu₂O_8+δ high‐T_c superconductor

Comparative study of macroscopic quantum tunneling inBi2Sr2CaCu2Oyintrinsic Josephson junctions wi

Exfoliated Thin $\hbox{Bi}_{2}\hbox{Sr}_{2} \hbox{CaCu}_{2}\hbox{O}_{8 + \delta}$ Single Crystal and Its Intrinsic Josephson Junctions

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Self-consistent estimations of heating in stacks of intrinsic Josephson junctions

Cited by 10 publications

References 14 publications

Resistive memory switching in layered oxides: AnBnO3n+2 perovskite derivatives and Bi2Sr2CaCu2O8+δ high‐Tc superconductor

Resistive memory switching in layered oxides: AnBnO3n+2 perovskite derivatives and Bi2Sr2CaCu2O8+δ high‐Tc superconductor

Comparative study of macroscopic quantum tunneling inBi2Sr2CaCu2Oyintrinsic Josephson junctions wi

Exfoliated Thin $\hbox{Bi}_{2}\hbox{Sr}_{2} \hbox{CaCu}_{2}\hbox{O}_{8 + \delta}$ Single Crystal and Its Intrinsic Josephson Junctions

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Resistive memory switching in layered oxides: A_nB_nO_3n+2 perovskite derivatives and Bi₂Sr₂CaCu₂O_8+δ high‐T_c superconductor

Resistive memory switching in layered oxides: A_nB_nO_3n+2 perovskite derivatives and Bi₂Sr₂CaCu₂O_8+δ high‐T_c superconductor