Self-Consistent GaAs FET Models for Amplifier Design and Device Diagnostics

Curtice, W.R.; Camisa, R.L.

doi:10.1109/tmtt.1984.1132896

Cited by 104 publications

(25 citation statements)

References 6 publications

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“…Furthermore the frequency iimitations of (1] and [5) have been overcome by a fully analytic solution of the intrinsic Y-parameter equations as in [7] for the circuit of Fig. L First, the external parasitic elements have to be determined by so-called cold modeling at a drain-to-source voltage of 0 V, as described in [! ], [2], and [4]. Then " hot" measured S parameters (Vrls > 0 V) arc de-embedded from the external parasitic elements to obtain the equivalent Y parameters of the intrinsic device.…”

Section: The Small-signal Equivalent Circuitmentioning

confidence: 99%

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High-frequency equivalent circuit of GaAs FETs for large-signal applications

Berroth

Bosch

1991

IEEE Trans. Microwave Theory Techn.

185

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-'l'lte.applicallon of GaAs field effect transistors in digital circuits requires a vaild description by an equivalent circuit at all possible .;ate arid dl'ain bias voltages for all frequendes from de up to lbe GHz ra4ge. This paper describes an equivalent circuit which takes into account ihe galt current of positively biased transistors as well as lbe symme~rical natun of lbe devices at low drain voltages. A fast method to determine the elements of tbe equivalent circuit from mea· sured S parameters b presented which delivers for the first time very good agreement for all ope. rating points.

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Section: The Small-signal Equivalent Circuitmentioning

confidence: 99%

“…For MMIC designs, small-signal equivalent circuits of the type shown in Fig. I have been used up to 60 GHz [1], [2). Recently developed MODFET's with very high transit frequencies have threshold voltages of about 0 V [3).…”

Section: Introductionmentioning

confidence: 99%

High-frequency equivalent circuit of GaAs FETs for large-signal applications

Berroth

Bosch

1991

IEEE Trans. Microwave Theory Techn.

185

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“…The most suitable method to examine a MOSFET at high frequencies involves S-parameter measurements [1]. For the characterization of the broadband behavior of a MOSFET device, measurements have to be performed at many bias settings over the frequency range of interest, as the electrical properties of MOSFET strongly depend on the applied gate bias and drain to source bias.…”

Section: Introductionmentioning

confidence: 99%

“…This enormous amount of Sparameter data of a single MOSFET can be reduced to a set of fifteen frequency-independent variables using an equivalent circuit of physically meaningful elements. Several commercially available programs exist which optimize some or all of these fifteen parameters [2], although in general the measured S-parameter data are approximated in an acceptable manner by these methods and the resulting element values depend on the starting values and may differ considerably from their actual physical values [1][2][3]. The analytical methods [4][5][6][7] on the other hand allow us to extract the equivalent circuit parameters in a straightforward manner.…”

Section: Introductionmentioning

confidence: 99%

An Accurate Small Signal Modeling of Cylindrical/Surrounded Gate MOSFET for High Frequency Applications

Ghosh¹,

Haldar²,

Gupta³

et al. 2012

JSTS:Journal of Semiconductor Technology and Science

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Abstract-An intrinsic small signal equivalent circuit model of Cylindrical/Surrounded gate MOSFET is proposed. Admittance parameters of the device are extracted from circuit analysis and intrinsic circuit elements are presented in terms of real and imaginary parts of the admittance parameters. S parameters are then evaluated and justified with the simulated data extracted from 3D device simulation.

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“…Two major solution categories have been proposed by researchers to solve the small-signal modeling problem of transistors. The first trend is based on the direct extraction of the small-signal circuit elements through analytic solutions [1][2][3][4]. This trend is very complicated because it depends on finding closed form expressions to relate the scattering parameters of the FET to the small-signal circuit elements.…”

Section: Introductionmentioning

confidence: 99%

Fet Small Signal Modelling Based on the DST and Mel Frequency Cepstral Coefficients

Elsharkawy¹,

El-Rabaie²,

Hindy³

et al. 2009

PIER B

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Abstract-In this paper, a new technique is proposed for field effect transistor (FET) small-signal modeling using neural networks. This technique is based on the combination of the Mel frequency cepstral coefficients (MFCCs) and discrete sine transform (DST) of the inputs to the neural networks. The input data sets to traditional neural systems for FET small-signal modeling are the scattering parameters and corresponding frequencies in a certain band, and the outputs are the circuit elements. In the proposed approach, these data sets are considered as forming random signals. The MFCCs of the random signals are used to generate a small number of features characterizing the signals. In addition, other MFCCs vectors are calculated from the DST of the random signals and appended to the MFCCs vectors calculated from the signals. The new feature vectors are used to train the neural networks. The objective of using these new vectors is to characterize the random input sequences with much more features to be robust against measurement errors. There are two benefits for this approach: a reduction in the number of neural networks inputs and hence a faster convergence of the neural training algorithm and robustness against measurement errors in the testing phase. Experimental results show that the proposed technique is less sensitive to measurement errors than using the actual measured scattering parameters.

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Self-Consistent GaAs FET Models for Amplifier Design and Device Diagnostics

Cited by 104 publications

References 6 publications

High-frequency equivalent circuit of GaAs FETs for large-signal applications

High-frequency equivalent circuit of GaAs FETs for large-signal applications

An Accurate Small Signal Modeling of Cylindrical/Surrounded Gate MOSFET for High Frequency Applications

Fet Small Signal Modelling Based on the DST and Mel Frequency Cepstral Coefficients

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