2007
DOI: 10.1088/0268-1242/22/6/002
|View full text |Cite
|
Sign up to set email alerts
|

Self-consistent model of 650 nm GaInP/AlGaInP quantum-well vertical-cavity surface-emitting diode lasers

Abstract: A comprehensive fully self-consistent model of oxide-confined GaAs-based vertical-cavity surface-emitting diode lasers (VCSELs) with GaInP/AlGaInP quantum-well active regions to simulate their room-temperature (RT) continuous-wave (CW) operation is presented. The model takes into consideration all observed or expected special features of GaInP/AlGaInP VCSELs. A complete set of model parameters is given. The model enables a deeper understanding of a VCSEL operation with full complexity of many inter-related phy… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

0
6
0
1

Year Published

2009
2009
2022
2022

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 27 publications
(7 citation statements)
references
References 85 publications
(70 reference statements)
0
6
0
1
Order By: Relevance
“…Since many of the optical, diffusion and gain parameters are temperature dependent, it is also necessary to know the exact temperature distribution within the semiconductor structure. To analyze the optical properties of our structure, we used the effective frequency method (EFM) [21,22]. To find the optimal design of the active region, we applied the 1-dimensional carrier transport model [23].…”
Section: Design Of the Laser Structurementioning
confidence: 99%
“…Since many of the optical, diffusion and gain parameters are temperature dependent, it is also necessary to know the exact temperature distribution within the semiconductor structure. To analyze the optical properties of our structure, we used the effective frequency method (EFM) [21,22]. To find the optimal design of the active region, we applied the 1-dimensional carrier transport model [23].…”
Section: Design Of the Laser Structurementioning
confidence: 99%
“…From the fit, the extracted T 0 is 83.0 K in the measured range (78-300 K), which is comparable to previously reported semiconductors. [46][47][48] The threshold rising exponentially may be ascribed to the thermal population of the optical phonon branch.…”
Section: Resultsmentioning
confidence: 99%
“…The number of iterations is usually significantly larger than the number of repetitions due to the thermal effects. Therefore, the thermal computations can be intermixed with the electrical computations and it is sufficient that the temperature distribution is updated once every 10-20 electrical iterations [33].…”
Section: Methodsmentioning
confidence: 99%