Self-consistent modeling of escape and capture of carriers in quantum wells

Khoie, Rahim; Ramey, S.

doi:10.1016/j.physe.2006.03.133

Cited by 10 publications

(3 citation statements)

References 4 publications

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“…where U qd and G qd are the Shockley-Read-Hall (SRH) recombination rate and the photogeneration rate in the GaAsPN quantum dot, respectively. These two equations are solved using the Poisson equation 27 :…”

Section: Theoretical Modelmentioning

confidence: 99%

“…Current continuity equations for the GaAsPN quantum dot systems can be expressed as 11 follows:

\frac{d n_{qd}}{dt} - G_{qd} + U_{qd} + \frac{n_{b}}{τ_{italiccn}} + \frac{n_{italicqd}}{τ_{italicen}} = 0

\frac{d p_{qd}}{dt} - G_{qw} + U_{qd} + \frac{p_{b}}{τ_{italiccp}} - \frac{p_{italicqd}}{τ_{italicep}} = 0,

where U qd and G qd are the Shockley–Read–Hall (SRH) recombination rate and the photogeneration rate in the GaAsPN quantum dot, respectively. These two equations are solved using the Poisson equation 27 :

\frac{d^{2} V}{d^{2} x} - \frac{q}{ε} ([], N_{A}^{-} - N_{D}^{+} + n_{b} + p_{b} - n_{qd} - p_{qd}) = 0

…”

Section: Theoretical Modelmentioning

confidence: 99%

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Modeling and simulation of GaAsPN / GaP quantum dot structure for solar cell in intermediate band solar cell applications

Aissat

Chenini

Nacer

et al. 2021

Intl J of Energy Research

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Summary This effort is founded on the modeling and simulation of the GaAsPN/GaP quantum dot (QD) solar cell. This quaternary alloy is one of the III‐V semiconductors, which gained importance in the recent years for optoelectronic applications. This importance comes from the fact that the quaternary GaAsPN can be a well‐grown lattice matched to GaP and Si substrates and to the bandgap that can be decreased drastically with the incorporation of nitrogen and arsenic into GaP, improving consequently the absorption and the wavelengths near the red part. These qualities make GaAsPN a good candidate for the growth on the Si substrate and low‐cost solar cell fabrication. The optical properties of GaAsPN/GaP QDs, such as strain, critical thickness, bandgap energy, the external quantum efficiency, and absorption coefficient, have been reported. The heterostructures consist of GaAs0.18P0.814N0.006 QDs separated by GaP barrier layers. The width and thickness of QDs are about 5 and 5 nm, respectively. Our results have been shown that 20 GaAs0.18P0.814N0.006/GaP QD layers produce a short‐circuit current of about 3.55 mA/cm2 and an efficiency of about 7.5%. In addition, we will be able to extend the absorption edge of a GaP solar cell from 0.48 μm to 0.5 μm for the same QD number layers inserted. The temperature effect on efficiency is considered.

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Section: Theoretical Modelmentioning

confidence: 99%

“…Current continuity equations for the GaAsPN quantum dot systems can be expressed as 11 follows:

\frac{d n_{qd}}{dt} - G_{qd} + U_{qd} + \frac{n_{b}}{τ_{italiccn}} + \frac{n_{italicqd}}{τ_{italicen}} = 0

\frac{d p_{qd}}{dt} - G_{qw} + U_{qd} + \frac{p_{b}}{τ_{italiccp}} - \frac{p_{italicqd}}{τ_{italicep}} = 0,

\frac{d^{2} V}{d^{2} x} - \frac{q}{ε} ([], N_{A}^{-} - N_{D}^{+} + n_{b} + p_{b} - n_{qd} - p_{qd}) = 0

…”

Section: Theoretical Modelmentioning

confidence: 99%

Modeling and simulation of GaAsPN / GaP quantum dot structure for solar cell in intermediate band solar cell applications

Aissat

Chenini

Nacer

et al. 2021

Intl J of Energy Research

View full text Add to dashboard Cite

show abstract

“…In practice, the actual carrier dynamics is the result of simultaneous combination of all the processes. The complexity of the resultant dynamics limits its investigation to the numerical self-consistent calculation on a large equation set of related processes [14][15][16][17]. Moreover, unless the special treatment is implemented, the incorporation of these processes is incompatible with the conventional drift-diffusion model, which is widely used as a tool for the device output estimation and the design optimization.…”

Section: Introductionmentioning

confidence: 99%

Effective mobility for sequential carrier transport in multiple quantum well structures

et al. 2017

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We investigate a theoretical model for effective carrier mobility to comprehensively describe the behavior of the perpendicular carrier transport across multiple quantum well (MQW) structures under applied electric field. The analytical expressions of effective mobilities for thermionic emission, direct tunneling, and thermally-assisted tunneling are derived based on the quasi-thermal equilibrium approximation and the semi-classical approach. Effective electron and hole mobilities in InGaAs/GaAsPMQWs predicted from our model are in good agreement with the experimental results obtained from the carrier time-of-flight measurement near room temperature. With this concept, the complicated carrier dynamics inside MQWs can be simplified to an effective mobility, an equivalent parameter which is more straightforward to handle and can be easily incorporated in the conventional drift-diffusion model.

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Semiconductor Boltzmann Transport Equation in Macroscopic and Quantum‐Confined Systems

Khoie

Venkat

1999

Wiley Encyclopedia of Electrical and Electronics Engineering

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Self-consistent modeling of escape and capture of carriers in quantum wells

Cited by 10 publications

References 4 publications

Modeling and simulation of GaAsPN / GaP quantum dot structure for solar cell in intermediate band solar cell applications

Modeling and simulation of GaAsPN / GaP quantum dot structure for solar cell in intermediate band solar cell applications

Effective mobility for sequential carrier transport in multiple quantum well structures

Semiconductor Boltzmann Transport Equation in Macroscopic and Quantum‐Confined Systems

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