Self-contact thin-film organic transistors based on tetramethyltetrathiafulvalene

Tamura, Sumika; Kadoya, Tomofumi; Kawamoto, Tadashi; Mori, Takehiko

doi:10.1063/1.4792704

Cited by 29 publications

(32 citation statements)

References 28 publications

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“…TTF‐TCNQ is the most common organic metal, and it has been used as electrodes in both p‐type and n‐type OFETs of various TTF derivatives, pentacene, copper‐phtalocianyne, DBTTF‐TCNQ, and fluorinated copper‐phtalocianyne . Selective deposition of TCNQ over the organic semiconductor tetramethyltetrathiafulvalene (TMTTF) or hexamethylenetetrathiafulvalene (HMTTF), led to inter‐diffusion and “on the spot” mixing between the two species, leading to the formation of the organic electrode in self‐contact transistors . These devices produced the lowest contact resistance ( R C W = 80 kΩ cm) compared to Au ( R C W = 3600 kΩ cm), and even the organic metal TTF‐TCNQ, when this was used as a stand‐alone contact ( R C W = 200 kΩ cm) (Figure b).…”

Section: Reducing Contact Resistance: Electrode Design and Beyondmentioning

confidence: 99%

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Contact Resistance in Organic Field‐Effect Transistors: Conquering the Barrier

Waldrip

Jurchescu

Gundlach

et al. 2019

Adv Funct Materials

241

261

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Organic semiconductors have sparked interest as flexible, solution processable, and chemically tunable electronic materials. Improvements in charge carrier mobility put organic semiconductors in a competitive position for incorporation in a variety of (opto-)electronic applications. One example is the organic field-effect transistor (OFET), which is the fundamental building block of many applications based on organic semiconductors. While the semiconductor performance improvements opened up the possibilities for applying organic materials as active components in fast switching electrical devices, the ability to make good electrical contact hinders further development of deployable electronics. Additionally, inefficient contacts represent serious bottlenecks in identifying new electronic materials by inhibiting access to their intrinsic properties or providing misleading information. Recent work focused on the relationships of contact resistance with device architecture, applied voltage, metal and dielectric interfaces, has led to a steady reduction in contact resistance in OFETs. While impressive progress was made, contact resistance is still above the limits necessary to drive devices at the speed required for many active electronic components. Here, the origins of contact resistance and recent improvement in organic transistors are presented, with emphasis on the electric field and geometric considerations of charge injection in OFETs.semiconductors with superior intrinsic charge transport properties, there is a stringent need to improve the device properties in order to allow organic devices to fulfill their technological prospectives. In the organic semiconductor community, contact resistance (R C ) has come under increased scrutiny as it is apparent that the final device performance is often domi nated by carrier injection, rather than the transport through the semiconductor layer. Contact resistance can impact OFET development in multiple ways. First, if not accounted for, a high contact resistance may lead to inaccurate extraction of the device parameters. Second, any inaccuracies in parameter extraction can have significant consequences on material development, from generating incorrect structure-property relationships to discarding organic semiconductors whose efficient intrinsic electrical properties have been masked by inefficient contacts. Beyond OFET and semiconductor characterization, analog, low power, and high frequency applications require a greater level of device parameter control than has been obtained in typical DC, high-voltage OFETs. For analog applications, e.g., integration of conditioning circuits such as local sense amps for distributed flexible sensor arrays, nonlinearity of the transistor response inhibits proper functioning and limits applicability of common models used to design circuitry. Low power device development for novel materials are hindered by the high voltage turn-on and current suppression in devices with large R C . Considering high-frequency applications, Klauk suggest...

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Section: Reducing Contact Resistance: Electrode Design and Beyondmentioning

confidence: 99%

Section: Reducing Contact Resistance: Electrode Design and Beyondmentioning

confidence: 99%

Contact Resistance in Organic Field‐Effect Transistors: Conquering the Barrier

Waldrip

Jurchescu

Gundlach

et al. 2019

Adv Funct Materials

241

261

View full text Add to dashboard Cite

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“…41 The strategy took into account the following considerations: (i) the same organic molecule can work not only as the active layer in organic transistors but also as the electrode in the form of the CT salt, and (ii) it had been previously shown that at the interface between TTF derivatives and TCNQ single crystals charge transfer occurs with the consequent formation of a conduction channel. 41 The strategy took into account the following considerations: (i) the same organic molecule can work not only as the active layer in organic transistors but also as the electrode in the form of the CT salt, and (ii) it had been previously shown that at the interface between TTF derivatives and TCNQ single crystals charge transfer occurs with the consequent formation of a conduction channel.…”

Section: Evaporated Ct Saltsmentioning

confidence: 99%

Organic metal engineering for enhanced field-effect transistor performance

Pfattner

Rovira

Mas‐Torrent

2015

Phys. Chem. Chem. Phys.

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A key device component in organic field-effect transistors (OFETs) is the organic semiconductor/metal interface since it has to ensure efficient charge injection. Traditionally, inorganic metals have been employed in these devices using conventional lithographic fabrication techniques. Metals with low or high work-functions have been selected depending on the type of semiconductor measured and, in some cases, the metal has been covered with molecular self-assembled monolayers to tune the work function, improve the molecular order at the interface and reduce the contact resistance. However, in the last few years, some approaches have been focused on utilizing organic metals in these devices, which have been fabricated by means of both evaporation and solution-processed techniques. Higher device performances have often been observed, which have been attributed to a range of factors, such as a more favourable organic/organic interface, a better matching of energy levels or/and to a reduction of the contact resistance. Further, in contrast to their inorganic counterparts, organic metals allow their chemical modification and thus the tuning of the Fermi level. In this perspective paper, an overview of the recent work devoted to the fabrication of OFETs with organic metals as electrodes will be carried out. It will be shown that in these devices not only is the matching of the HOMO or LUMO of the semiconductor with the metal work-function important, but other aspects such as the interface morphology can also play a critical role. Also, recent approaches in which the use of organic charge transfer salts as buffer layers at the metal contacts or on the dielectric or as doping agents of the organic semiconductors that have been used to improve the device performance will be briefly described.

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“…6). [26][27][28][29] The resulting reduced Schottky barrier is another origin of the better performance of the (TTF)(TCNQ)-based transistors. [26][27][28][29] The resulting reduced Schottky barrier is another origin of the better performance of the (TTF)(TCNQ)-based transistors.…”

Section: Transistor Characteristicsmentioning

confidence: 99%

Air-stable n-channel organic field-effect transistors based on a sulfur rich π-electron acceptor

et al. 2015

Self Cite

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International audienceThin-film and single-crystal n-channel organic field-effect transistors are built from the sulfur rich π-electron acceptor, (E)-3,3′-diethyl-5,5′-bithiazolidinylidene-2,4,2′,4′-tetrathione (DEBTTT). Different source and drain electrode materials are investigated: gold, the conducting charge transfer salt (tetrathiafulvalene)(tetracyanoquinodimethane), and carbon paste. Regardless of the nature of the electrodes, air-stable n-channel transistors have been obtained. Single crystals exhibit a higher performance than the thin-film transistors with a mobility of up to 0.22 cm2 V−1 s−1. These thin-film and single-crystal devices exhibit excellent long-term stability as demonstrated by the mobility measured during several weeks. The high mobility and air stability are ascribed to the characteristic three-dimensional S–S network coming from the thioketone sulfur atoms

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Self-contact thin-film organic transistors based on tetramethyltetrathiafulvalene

Cited by 29 publications

References 28 publications

Contact Resistance in Organic Field‐Effect Transistors: Conquering the Barrier

Contact Resistance in Organic Field‐Effect Transistors: Conquering the Barrier

Organic metal engineering for enhanced field-effect transistor performance

Air-stable n-channel organic field-effect transistors based on a sulfur rich π-electron acceptor

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