“…As a typical semiconductor, Te-I has a narrow direct band gap (band gap energy 0.35 eV) at ambient conditions. It exhibits many unique properties such as photoconductivity, catalytic activity, piezoelectricity, thermoelectricity, and nonlinear optical responses, [8][9][10][11] which make it a multifunctional material in many electric and optoelectronic devices, such as self-developing holographic recording devices, radiative cooling devices, gas sensors, field-effect devices, and infrared acousto-optic deflectors. [10,12,13] Besides, the controlled growth of multi-morphology Te crystals (such as onedimensional nanorods and nanowires, and two-dimensional hierarchical flowerlike microarchitecture) [11,[14][15][16][17][18][19] has developed maturely, which makes it possible to be used in nanodevices.…”