In recent years, additive manufacturing has been evolving towards flexible substrates for the fabrication of printable electronic devices and circuits. Generally polymer-based, these emerging substrates suffer from their heat sensitivity and low glass-transition temperatures. As such they require new highly-localized sintering processes to treat the electronic inks without damaging the polymer-based substrate. Laser-based sintering techniques have shown great promises to achieve high-quality sintering locally, while controlling the heat penetration to preserve the polymer substrates integrity. In this report, we explore new optimization pathways for dynamic laser-based sintering of conductive silver inks. Multiple passes of a pulsed laser are first performed while varying pulse train frequencies and pulse energies as an attempt to optimize the properties of the silver inks. Then, time-domain pulse shaping is performed to alter the properties of the conductive inks. Together, these pathways allow for the careful control of the time-domain laser energy distribution in order to achieve the best electronic performances while preserving the substrate’s integrity. Sheet resistance values as low as 0.024Ω/□ are achieved, which is comparable to conventional 1-hour oven annealing, with the processing time dramatically reduced to the milisecond range. These results are supported by finite element modeling of the laser-induced thermal dynamics.
Ablative holographic recording was performed on Li-implanted Te thin films using a Nd:YAG laser. Implantation doses ranging from 2.9×1013 to 2.3×1015 ions/cm2 within the thin films were seen to produce an increase of the writing threshold by 20% and a reduction of the diffraction efficiency of the recorded gratings at the highest doses. For doses as low as 1.2×1014 ions/cm2, a considerable increase in the stability of the recording media has been observed.
The performance of a diode-pumped Cr:LiSAF laser and its intracavity frequency-doubled operation is reported. Close to 1 W of quasi-cw power at 870 nm was obtained in multimode operation. Power in excess of 20-mW cw of TEM(00) second-harmonic power at 435 nm has also been obtained by using a lithium triborate crystal with an infrared-to-visible conversion efficiency of 33%. This result is believed to be the highest yet reported for a true cw blue output from a diode-pumped Cr:LiSAF system. However, the maximum attainable output power was limited by thermal fluorescence quenching. The effect of the pump size on the temperature rise and on the small-signal gain is investigated.
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