1962
DOI: 10.1080/14786436208213170
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Self-diffusion in platinum

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Cited by 67 publications
(16 citation statements)
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“…To measure the self-diffusion coefficients of fcc Pt by mechanical sectioning from 1598 to 1873 K, Kidson and Ross [36] applied a mixture of 193 Pt, 195m Pt, and 197 Pt obtained by neutron activation of pure Pt on polycrystalline fcc Pt. Cattaneo et al [37] employed 195 Pt to determine the self-diffusion coefficients of fcc Pt by surface decrease method from 1523 to 1998 K, where polycrystalline Pt was used. With the sputter sectioning method, the diffusivities of 197 Pt in fcc Pt single crystals were measured by Rein et al [38] from 850 to 1265 K. The impurity diffusion coefficients of Pt in polycrystalline Cu were measured by Fogelson et al [39] with X-ray diffraction analysis from 1023 to 1348 K. Neumann et al [40] measured the impurity diffusion coefficients of 191 Pt and 195 Pt in single crystal Cu by the microtome sectioning method from 1149 to 1352 K.…”
Section: The Cu-pt Systemmentioning
confidence: 99%
“…To measure the self-diffusion coefficients of fcc Pt by mechanical sectioning from 1598 to 1873 K, Kidson and Ross [36] applied a mixture of 193 Pt, 195m Pt, and 197 Pt obtained by neutron activation of pure Pt on polycrystalline fcc Pt. Cattaneo et al [37] employed 195 Pt to determine the self-diffusion coefficients of fcc Pt by surface decrease method from 1523 to 1998 K, where polycrystalline Pt was used. With the sputter sectioning method, the diffusivities of 197 Pt in fcc Pt single crystals were measured by Rein et al [38] from 850 to 1265 K. The impurity diffusion coefficients of Pt in polycrystalline Cu were measured by Fogelson et al [39] with X-ray diffraction analysis from 1023 to 1348 K. Neumann et al [40] measured the impurity diffusion coefficients of 191 Pt and 195 Pt in single crystal Cu by the microtome sectioning method from 1149 to 1352 K.…”
Section: The Cu-pt Systemmentioning
confidence: 99%
“…Hence the temperature instabilities of sub-micron unit cell structures can be similarly addressed for metals that in those respects show a similar behaviour to Ni, 37 such as Co, 43 or for metals, that require higher growth temperatures but have lower self-diffusivities, such as Pt. [44][45][46] For metals, such as Cu, that require higher temperatures for graphene growth and have high self-diffusivities (3 orders of magnitude higher for Cu than Ni at 900 °C), 47,48 successfully applying our approach may be more challenging. Nonetheless there are further avenues to increase template stability for instance by plasma precoating.…”
Section: Fig 3 (A) Raman Spectra Of: Graphene On a 500 Nm Thick Ni mentioning
confidence: 99%
“…The activation energies depend strongly on the fabrication process of the studied test samples. The value for the pure-Pt samples is, with 1.22 eV, low compared to the self-diffusion activation energy in bulk platinum of 2.89 eV [13], suggesting that the electromigration-based damaging takes place in the grain boundaries and at the surface of the layer. The titanium or tantalum adhesion layers, which lead to Ti or Ta oxide formation in the platinum grain boundaries, increase the activation energy of the samples and improve their stability as already observed for aluminium addition to copper conductive lines [14].…”
Section: Reliability Of Platinum Thin Filmsmentioning
confidence: 96%