Self-diffusion of cadmium telluride

Study on the effect of Cd-diffusion annealing on the electrical properties of CdZnTe

“…2. Our results are close to those obtained by Jones and Stewart [1] (50  expðÀ2:47ev=kTÞcm 2 = (623-1073 K)) and lie between the values by Borsenberger and Stevenson [2] and those by Whelan and Shaw [3]. Because Cd 0.9 Zn 0.1 Te and CdTe have similar crystal structure and defect type, we deem that both the data for the Cd self-diffusion coefficient and the model presented above are reasonable.…”

Study on the effect of In diffusion annealing on the electrical properties of CdZnTe by a transformation model

“…From the solution of the diffusion of infinite source equation, we find that the diffusion coefficient of some impurities in the Cd 0.9 Zn 0.1 Te crystal at a certain temperature can be obtained by our model if the concentration distribution of the impurity inside the slice were given, and Khattak and Scott [18] reported the concentration distribution of donors inside the CdTe slices through the methods of Schottky barrier capacitance and deep-level transient spectroscopy after the slices were annealed in the vapour of In. Therefore, combined with some parameters of CdTe, our model was used to fit the data provided by Khattak and Scott [18] (see figure 2), and In diffusion coefficient values of 3.34 × 10 −9 cm 2 s −1 and 3.5×10 −9 cm 2 s −1 in CdTe slices at the temperature of 1073 K were obtained, which are quite close to the results reported by Jones and Stewart [15]. Because of the similar crystal structure and defect type of Cd 0.9 Zn 0.1 Te and CdTe, we deem that both the data for the In diffusion coefficient and the model presented above are reasonable.…”

“…where 1.85 eV is the activation energy of the In atom in Cd 0.9 Zn 0.1 Te. Since data for the In diffusion coefficient in Cd 0.9 Zn 0.1 Te are unavailable elsewhere, we compare our results with the values of the In diffusion coefficient in the CdTe crystal obtained by the atom tracer method, which are shown in figure 1, where the results of lines A, B and C are obtained under three conditions (lower than the equilibrium partial pressure of Cd [14], equilibrium partial pressure of Cd (Cd/In reservoir) [15] and saturated pressure of Cd [7], respectively). From the figure we can find that the In diffusion coefficient obtained from line C is smaller than that from lines A and B, which may result from a lower V Cd concentration in CdTe under saturated Cd pressure.…”

Studies on the diffusion of the halogens into CdTe

“…The occurrence of two-component diffusion profiles, particularly in II-VI semiconductors, is common and several explanations have been proposed. They have been ascribed to interstitial-substitutional mechanisms in impurity diffusion [14], whereas in isoconcentration and self-diffusion the second, faster component has been related to short-circuit paths (e.g. dislocations or subgrain boundaries) [15] or chemical disequilibrium.…”