Self-formed silicon quantum wires on ultrasmooth sapphire substrates

Yanagiya, S.; Kamimura, Shunsuke; Fujii, Masanori; Ishida, M.; Moriyasu, Yoshitaka; Matsui, Masahiro; Yoshimoto, Mamoru; Ohnishi, T.; Yoshida, Kenji; Sasaki, Kenji; Koinuma, Hideomi

doi:10.1063/1.119908

Cited by 18 publications

(9 citation statements)

References 20 publications

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“…Individual nanowires of silicon have been produced by a number of methods, 23,26,27,[31][32][33][34][35][36][37][38][39][40][41][42] for example by natural masking, 32 lithography, 23,38 wet-chemical etching, 34,27 and vapor-liquid-solid growth. 35 These methods use growth techniques which lead to natural surface passivation of the wires, usually by oxidation.…”

Section: Introductionmentioning

confidence: 99%

Fullerene-structured nanowires of silicon

1999

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Silicon vapor from a magnetron sputter source was deposited onto highly oriented pyrolytic graphite, resulting in the formation of nanoscale wires. The structures were analyzed by scanning tunneling microscopy. The wires are from 3 to 7 nm in diameter and at least 100 nm long. They tend to be assembled parallel in bundles. In order to understand the observed quasi-one-dimensional structures, diamondlike and fullerenelike wire models are constructed. Molecular-orbit calculations yield binding energies and band gaps of such structures, and lead us to propose a fullerene-type Si 24 -based atomic configuration for nanowires of silicon.

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Section: Introductionmentioning

confidence: 99%

Fullerene-structured nanowires of silicon

1999

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“…Si nanowires (SiNWs) have been produced by various techniques [1][2][3][4][5][6][7][8][9][10]. Broad applications of SiNWs for nanoelectronic or nanothermoelectronic devices or for physical-property testing systems have been proposed [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Integrated freestanding single-crystal silicon nanowires: conductivity and surface treatment

et al. 2010

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Abstract:Integrated freestanding single-crystal silicon nanowires with typical dimension of 100 nm × 100 nm × 5 μm are fabricated by conventional 1:1 optical lithography and wet chemical silicon etching. The fabrication procedure can lead to wafer-scale integration of silicon nanowires in arrays. The measured electrical transport characteristics of the silicon nanowires covered with/without SiO2 support a model of Fermi level pinning near the conduction band. The I-V curves of the nanowires reveal a current carrier polarity reversal depending on Si-SiO2 and Si-H bonds on the nanowire surfaces.

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“…Such a mechanism has been reported for many systems, such as, Ge on Si ͑110͒, 15 SiGe on Si ͑100͒. 20 Si on sapphire, 21 and InGaAs on GaAs. 22 In these cases, either 3D islands or 2D wires were observed to nucleate along the ledges.…”

Section: Discussionmentioning

confidence: 67%

Role of surface instability and anisotropy in strain relaxation of epitaxial SiGe on Si (110)

Krishnamurthy

1999

Journal of Applied Physics

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We report on the morphological evolution of strained, low-mismatch Si 0.67 Ge 0.33 and Si 0.75 Ge 0.25 films on Si ͑110͒, covering both the elastic and early stages of plastic relaxation during growth. It is seen that three-dimensional island formation is suppressed at 650 and 700°C on the Si ͑110͒ surface, unlike on the Si ͑100͒ surface under the same growth conditions. Instead, a high density of ledges oriented along an elastically hard ͗111͘ direction, and a very low density of nanowires oriented along the single in-plane ͗110͘ azimuth are observed. Continued growth leads to the formation of misfit defects oriented along the ͗110͘ direction and disappearance of the nanowires.

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Self-formed silicon quantum wires on ultrasmooth sapphire substrates

Cited by 18 publications

References 20 publications

Fullerene-structured nanowires of silicon

Fullerene-structured nanowires of silicon

Integrated freestanding single-crystal silicon nanowires: conductivity and surface treatment

Role of surface instability and anisotropy in strain relaxation of epitaxial SiGe on Si (110)

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