Self‐Healing of Proton‐Irradiated Organic Photodiodes and Photovoltaics

Abstract

In this study, a comprehensive quantitative analysis of the photodiode (PD) is conducted and photovoltaic (PV) characteristics of organic non‐fullerene PCE10:ITIC‐4F devices before and after exposure to a 150 ns pulse of 170 keV proton irradiation with the fluence of 2·1012 p cm−2 that is equivalent to ≈6 years of operation at a low Earth orbit. While an expected initial performance reduction happened in the photodiode and photovoltaic operation modes, a hitherto unknown self‐healing effect in the organic devices is observed several days after the proton irradiation. The organic bulk‐heterojunction (BHJ) material properties and the multi‐mechanisms recombination processes before and after irradiation and during self‐healing are investigated. This analysis provides a quantitative understanding of the changes occurring in the device physics and points toward the relevant aspects of the self‐healing mechanism related to the dynamics of proton‐induced traps in the bulk of the organic active layer. Ultimately, the synergy of record lightweight features and newly discovered self‐healing of proton‐induced damage in organic PDs and solar cells highlights their great potential for applications in rapidly emerging space technology.

Simulation and numerical modeling of CuO films thickness influence on the efficiency of graphite/CuO/Ni solar cells

“…to the number of incident photons at a given wavelength and is described by the following equation 35,40 :…”

“…External quantum efficiency (EQE) as a function of wavelength is one of the most important characteristics of a solar cell. It is defined as the ratio of the number of photo‐generated charge carriers in the external circuit $$$ \left[{\int}_0^LG\ \left(x,\lambda \right)\kern0.5em dx\right] $$$ to the number of incident photons at a given wavelength and is described by the following equation 35,40 : $$$$ \mathrm{EQE}=\kern0.5em \frac{J_{ph}\left(\lambda, V\right)}{I\left(\lambda \right)}\frac{h\ \nu }{q}=\frac{\int_0^LG\ \left(x,\lambda \right)\kern0.5em dx}{I\left(\lambda \right)}\frac{h\ \nu }{q}, $$$$ where J ph is the photocurrent density, I ( λ ) is the intensity of the incident light at a specific wavelength, q is the elementary charge (the charge of an electron), and hν determines the energy of the photon for the monochromatic incident light. This parameter can directly provide the detail of optical behaviors under the monochromatic wavelength, including the number of generated electrons upon the absorption of photons.…”

Self-Powered Printed Flexible Bifacial Perovskite Photodetector

“…Since the PFBPPDs presented in this work are self-powered devices, their detectivity is limited by Johnson noises. The detectivity limited by Johnson noise of self-powered PDs is calculated using the following relation − D * = R A i t h e r m a l = R A R s h 4 k T Here, A is the device area, R sh is the shunt resistance, k is Boltzmann’s constant, and T is the absolute temperature. The detectivity spectra of the PFBPPD for the bottom- and top-side illuminations are shown in Figure d.…”

Influence of Cuo Films Thickness on the Efficiency of Graphite/Cuo/Ni Solar Cells

“…External quantum e ciency (EQE) as a function of wavelength is one of the most important characteristics of a solar cell. It is de ned as the ratio of the number of photo-generated charge carriers in the external circuit to the number of incident photons at a given wavelength and is described by the following equation [30,33]:…”