Self-heating dependent characteristic of GaN-based light-emitting diodes with and without AlGaInN electron blocking layer

Wang, Tianhu; Xu, Jinliang; Wang, Xiaodong

doi:10.1007/s11434-014-0235-4

Cited by 6 publications

(1 citation statement)

References 55 publications

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“…It is well known that current crowding effect will lead to localized raising of the temperature [10,[22][23][24][25]. Therefore, a comparison experiment was conducted to verify the hypothesis that temperature plays a critical role in DUV-LED emission.…”

Section: Resultsmentioning

confidence: 99%

Current crowding in deep ultraviolet light-emitting diodes with fish-bone shaped p-electrode by microscopic emission investigation

Chen

et al. 2023

Semicond. Sci. Technol.

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Current crowding is the main bottleneck preventing the prosperity of AlGaN-based deep-ultraviolet light-emitting-diodes (DUV-LEDs) considering the low electrical conductivity of p-type contact layer. A deeper understanding of the current distribution in p-AlGaN is critical, which enables the rational design of advanced device architectures. In this work, a fish-bone-shaped p-type electrode was deposited on top of a 280 nm AlGaN DUV-LED for investigation of localized emissions. A significantly raised junction temperature was identified, causing efficiency droop in DUV-LEDs under relatively low injection current with fish-bone-shaped p-type electrodes. High junction temperature is attributed to the significantly high localized current density which is confirmed by the spatial-resolved electroluminescence (EL) spectra and theoretical simulation. The crowding current level beneath the p-electrodes is estimated to be several times higher than that in between the electrodes.

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Section: Resultsmentioning

confidence: 99%

Current crowding in deep ultraviolet light-emitting diodes with fish-bone shaped p-electrode by microscopic emission investigation

Chen

et al. 2023

Semicond. Sci. Technol.

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Built-in-polarization and thermal conductivity of InxGa1-N/GaN heterostructures

Gedam

Sahoo

2017

Physica E: Low-dimensional Systems and Nanostructures

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Electric field dynamics in nitride structures containing quaternary alloy (Al, In, Ga)N

Borysiuk

Sakowski

Dróżdż

et al. 2016

Journal of Applied Physics

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Molecular beam epitaxy growth and basic physical properties of quaternary AlInGaN layers, sufficiently thick for construction of electron blocking layers (EBL), embedded in ternary InGaN layers are presented. Transmission electron microscopy (TEM) measurement revealed good crystallographic structure and compositional uniformity of the quaternary layers contained in other nitride layers, which are typical for construction of nitride based devices. The AlInGaN layer was epitaxially compatible to InGaN matrix, strained, and no strain related dislocation creation was observed. The strain penetrated for limited depth, below 3 nm, even for relatively high content of indium (7%). For lower indium content (0.6%), the strain was below the detection limit by TEM strain analysis. The structures containing quaternary AlInGaN layers were studied by time dependent photoluminescence (PL) at different temperatures and excitation powers. It was shown that PL spectra contain three peaks: high energy donor bound exciton peak from the bulk GaN (DX GaN) and the two peaks (A and B) from InGaN layers. No emission from quaternary AlInGaN layers was observed. An accumulation of electrons on the EBL interface in high-In sample and formation of 2D electron gas (2DEG) was detected. The dynamics of 2DEG was studied by time resolved luminescence revealing strong dependence of emission energy on the 2DEG concentration. Theoretical calculations as well as power-dependence and temperature-dependence analysis showed the importance of electric field inside the structure. At the interface, the field was screened by carriers and could be changed by illumination. From these measurements, the dynamics of electric field was described as the discharge of carriers accumulated on the EBL.

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Self-heating dependent characteristic of GaN-based light-emitting diodes with and without AlGaInN electron blocking layer

Cited by 6 publications

References 55 publications

Current crowding in deep ultraviolet light-emitting diodes with fish-bone shaped p-electrode by microscopic emission investigation

Current crowding in deep ultraviolet light-emitting diodes with fish-bone shaped p-electrode by microscopic emission investigation

Built-in-polarization and thermal conductivity of InxGa1-N/GaN heterostructures

Electric field dynamics in nitride structures containing quaternary alloy (Al, In, Ga)N

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