Self-interaction of ultrashort pulses in an epsilon-near-zero nonlinear material at the telecom wavelength

Wu, Jiaye; Malomed, Boris A.; Fu, Hong; Li, Qian

doi:10.1364/oe.27.037298

Cited by 31 publications

(11 citation statements)

References 32 publications

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“…It can be found that the peak absorption appears at the wavelength that maximizes the ratio of |Im(ε ITO )|/|Re(ε ITO )| 2 , near the communication wavelength, and it may be caused by the plasmon resonance of ITO near the ENZ point [42]. With the increase of the number of layers, the thickness of each layer decreases, and the whole multilayer structure shows better absorption effect due to the enhanced light scattering and the enhanced light localization caused by the multimode resonance effect [43], [44]. Therefore, increasing the number of layers is beneficial to improve the absorption bandwidth.…”

Section: Absorption Mechanisms Of Enz Multilayersmentioning

confidence: 99%

Optimization of Epsilon-Near-Zero Multilayers for Near-Perfect Light Absorption Using an Enhanced Genetic Algorithm

Wang

et al. 2021

IEEE Photonics J.

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Using epsilon-near-zero (ENZ) subwavelength optical multilayer materials with simple structure and thin total thickness to achieve target characteristics is extremely important and beneficial for the realization of on-chip integration and largescale application of optical devices. Combining with the enhanced genetic algorithm (EGA), this work breaks the limitation of the periodicity of traditional ENZ multilayer structures, and investigates the aperiodic ENZ transparent conducting oxide (TCO)-dielectric multilayer structures. It is realized that under the given conditions, an optimal structure can possess a maximum peak absorption and the broadest absorption bandwidth near the communication wavelength. In the 6-layer structure with a total thickness of 600 nm studied in this work, EGA can optimize the peak absorption from 0.91 to 0.95. Additionally, the absorption bandwidth is optimized from 120 nm to 227 nm, which is enhanced more than 180%. The absorption performance of this optimized structure is comparable to that of a more complex structure with the same total thickness but more layers, or a structure with the same number of layers but a larger total thickness. Conclusively, the proposed EGA optimization method can simplify the structure of the multilayer system, reduce the total thickness of the required ENZ material, and thus greatly simplify the production process and reduce the production cost.

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Section: Absorption Mechanisms Of Enz Multilayersmentioning

confidence: 99%

Optimization of Epsilon-Near-Zero Multilayers for Near-Perfect Light Absorption Using an Enhanced Genetic Algorithm

Wang

et al. 2021

IEEE Photonics J.

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“…The past two decades have seen the rapid development of epsilon-near-zero (ENZ) linear and nonlinear photonics [1][2][3][4]. Combining ultrahigh intensity and ultrashort duration of pulses with the near-zero permittivity or refractive index and large optical nonlinearities [5][6][7][8], unconventional light-matter interaction and pulse shaping [9][10][11][12], frequency translation [13,14], generation of the second-, third-, and higher harmonics [15][16][17][18][19][20], as well as the tera-hertz generation [21], have been demonstrated, giving rise to nanophotonic applications, such as optical switching [22,23], electro-optical modulation [24], photonic memory [25], etc.…”

Section: Introductionmentioning

confidence: 99%

Observation of SQUID-like behavior in fiber laser with intra-cavity epsilon-near-zero effect

Wu,

Liu,

Malomed

et al. 2022

Preprint

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Establishing relations between fundamental effects in far-flung areas of physics is a subject of great interest in the current research. We here report realization of a novel photonic system akin to the radio-frequency superconducting quantum interference device (RF-SQUID), in a fiber laser cavity with epsilon-near-zero (ENZ) nanolayers as intra-cavity components. Emulating the RF-SQUID scheme, the photonic counterpart of the supercurrent, represented by the optical wave, circulates in the cavity, passing through effective optical potential barriers. Different ENZ wavelengths translate into distinct spectral outputs through the variation of cavity resonances, emulating the situation with a frequencyvarying tank circuit in the RF-SQUID. Due to the presence of the ENZ element, the optical potential barrier is far lower for selected frequency components, granting them advantage in the gain-resource competition. The findings reported in this work provide a deeper insight into the ultrafast ENZ photonics, revealing a new path towards the design of nanophotonic on-chip devices with various operational functions, and offer a new approach to study superconducting and quantummechanical systems.

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“…By adjusting the free carrier concentration, the real part of ITO's permittivity can reach a close-to-zero value at the telecommunication wavelength. This effect is so-called epsilon-near-zero (ENZ) effect, which has exhibited many fantastic optical properties, such as enhancing light-material interaction, large nonlinear responses and strong coupling phenomena, etc [17]- [20]. In addition, ITO has a slight change in carrier density and mobility in the on-chip operating temperature range, which support the modulator maintains a stable working performance [21]- [23].…”

Section: Introductionmentioning

confidence: 99%

Comparison Study of Multi-Slot Designs in Epsilon-Near-Zero Waveguide-Based Electro-Optical Modulators

Sha

Xie

et al. 2021

IEEE Photonics J.

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We present a systematical comparative research on the modulation performance and the optimization of the multi-slot waveguide modulator at the telecom wavelength of 1.55 μm. It is found that the existence of epsilon-near-zero indium tin oxide slots in modulators can enhance the optical confinement, thus yielding a high extinction ratio (ER) and low insertion loss. Among the designed four types of slot modulators, the single-slot modulator exhibits the widest modulation bandwidth of 78.75 GHz and lowest energy consumption of 1.15 pJ/bit, while the dual-slot one shows the moderate performance. For the more-slot designs, the tri-slot has the advantages of a maximum figure of merit of ~ 106, and the quadri-slot one has the highest ER of 1.38 dB/μm. By integrating the multi-slot modulator on the silicon waveguide, the quadri-slot modulator waveguide exhibits broad optical bandwidth of 83 nm from 1479 to 1560 nm and large modulation depth (~ 18.3 dB). The performance of four types of slot modulators can be further improved from different aspects by the optimization of their geometric parameters. The results of this work could be useful in the design and selection of high performance on-chip modulators for optical communications and ultrafast data processing.

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Self-interaction of ultrashort pulses in an epsilon-near-zero nonlinear material at the telecom wavelength

Cited by 31 publications

References 32 publications

Optimization of Epsilon-Near-Zero Multilayers for Near-Perfect Light Absorption Using an Enhanced Genetic Algorithm

Optimization of Epsilon-Near-Zero Multilayers for Near-Perfect Light Absorption Using an Enhanced Genetic Algorithm

Observation of SQUID-like behavior in fiber laser with intra-cavity epsilon-near-zero effect

Comparison Study of Multi-Slot Designs in Epsilon-Near-Zero Waveguide-Based Electro-Optical Modulators

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