Self-interstitials and thermal donor formation in silicon: new measurements and a model for the defects

Newman, R. C.; Oates, A. S.; Livingston, F M

doi:10.1088/0022-3719/16/19/002

Cited by 68 publications

(17 citation statements)

References 15 publications

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“…The results of Stavola et al ( 18 ) and Newman et a1. ( 19 ) over a temperature range of 220-360C indicate good agreement with the extrapolated high temperature direct measurements of long-range diffusion. It is assumed, therefore, that an interstitial oxygen atomic hop is the same diffusion mechanism as the high temperature longrange oxygen transport.…”

Section: Intrinsic Oxygen Diffusivitysupporting

confidence: 73%

The Diffusivity and Solubility of Oxygen in Silicon

Mikkelsen

1985

MRS Proc.

149

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The diffusivity and solubility are two key parameters required for understanding and modeling the behavior of oxygen in silicon. This paper gives an up to date review of experimental determinations of these parameters, including some recent unpublished data. There is very good agreement within the long-range diffusivity results determined by secondary ion mass spectrometry (SIMS), charged particle analysis (CPA), and x-ray diffraction. The oxygen diffusivity is independent of [0], orientation, ambient, or crystal doping. The data also extrapolate well to the diffusivities obtained by the intrinsic oxygen atomic hop frequency at low temperature to give a combined expression of D = 0.13 exp(-2.53eV/kT) cm 2 s-1 . There is somewhat poorer agreement on the solubility measurements, in part due to inconsistent calibration factors and the observation of a processing-dependent extrinsic oxygen solubility. The intrinsic solubility derived from SIMS, CPA, and infrared absorption is described by [0] = 9E22 exp (-1.52 eV/kT) cm-3 . Finally, the above diffusivity and solubility parameters are compared to modeling of oxygen related phenomena in silicon, such as thermal donor and precipitate formation kinetics, and interaction with point defects during the relaxation of stress-aligned dichroism.

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Section: Intrinsic Oxygen Diffusivitysupporting

confidence: 73%

The Diffusivity and Solubility of Oxygen in Silicon

Mikkelsen

1985

MRS Proc.

149

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“…Although the influence of the silicon self-interstitial on oxygen diffusion is also still unclear, the generation of one silicon selfinterstitial is experimentally confirmed when two oxygen atoms are precipitated. 25 Finally, we show the nucleation rate of oxide precipitates as a function of annealing temperature in Fig. 6.…”

Section: ͑14͒mentioning

confidence: 99%

Diffusivity of oxygen in Czochralski silicon at 400–750 °C

Takeno

Hayamizu

Miki

1998

Journal of Applied Physics

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Diffusivity of oxygen in Czochralski silicon crystal in the temperature range of 400-750°C has been determined from macroscopic oxygen precipitation behavior. The oxygen diffusivities at several nucleation temperatures from 400 to 750°C were deduced from precipitated oxygen concentrations after a series of precipitate growth heat treatments, 800°C/4 h and 1000°C/16 h, using an extended nucleation theory. The measured oxygen diffusivity at 450-650°C is 2 -4 ϫ10 Ϫ14 cm 2 /s, independent of the temperature, and considerably larger than the generally accepted normal diffusivity of D i ϭ0.13 exp(Ϫ2.53 eV/kT). Moreover, the diffusivity at 450°C is found to be roughly proportional to the interstitial oxygen concentration. It is suggested that this dependence of oxygen diffusivity on interstitial oxygen concentration can be explained by a model involving fast diffusing oxygen molecules.

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“…The formation of nitride compound is evident from the XRD diffractogram. Figure ( composes of a-phase silicon only, the formation of c-phase silicon is associated with the thermal effect [30]. The formation of nitride phase is associated with the high temperature processing at the surface during the laser scanning; in which case, high pressure nitrogen gas is used in the irradiated region.…”

Section: Resultsmentioning

confidence: 99%