Self-limited RRAM with ON/OFF resistance ratio amplification

Jo, Sung‐Hyun; Kumar, T.; Zitlaw, Cliff; Nazarian, Hagop

doi:10.1109/vlsit.2015.7223715

Cited by 12 publications

(9 citation statements)

References 1 publication

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“…Some of the most prominent researchers in the field of RS usually present values of R HRS and R LRS in every cycle when making endurance claims. ,, This is also the method used by the industry before trying to commercialize RS devices for different technologies, independently if they show that in papers or not (sometimes articles from companies do not disclose enough information due to confidentiality issues). Therefore, it would be much better if the entire community working on RS devices always support endurance claims by measuring R HRS and R LRS in every cycle (see Figure e,f and Figure c,d).…”

Section: Discussion and Prospectsmentioning

confidence: 99%

Section: Endurance Characterization Methodsmentioning

confidence: 99%

“…This method is similar to quality controls in which only a certain number of events and/or products of the total population are analyzed; therefore, again, the more cycles that one measures, the better. This method has been employed by companies to characterize the endurance of metal/TMO/metal RS devices that showed highly reliable switching behavior when applying steps 1–4, and values >10 9 cycles have been achieved (see Figure e). , Engineering the shape of the PVS to minimize reading times and maximize performance has also been reported . In any case, measuring the value of R HRS and R LRS for >10 10 cycles is possible (see Figure g) and is the preferred way to do it.…”

Section: Endurance Characterization Methodsmentioning

confidence: 99%

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Standards for the Characterization of Endurance in Resistive Switching Devices

et al. 2021

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Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic memories, true random number generators, radiofrequency switches, neuromorphic vision sensors, and artificial neural networks. The main factor hindering the massive employment of RS devices in commercial circuits is related to variability and reliability issues, which are usually evaluated through switching endurance tests. However, we note that most studies that claimed high endurances >106 cycles were based on resistance versus cycle plots that contain very few data points (in many cases even <20), and which are collected in only one device. We recommend not to use such a characterization method because it is highly inaccurate and unreliable (i.e., it cannot reliably demonstrate that the device effectively switches in every cycle and it ignores cycle-to-cycle and device-to-device variability). This has created a blurry vision of the real performance of RS devices and in many cases has exaggerated their potential. This article proposes and describes a method for the correct characterization of switching endurance in RS devices; this method aims to construct endurance plots showing one data point per cycle and resistive state and combine data from multiple devices. Adopting this recommended method should result in more reliable literature in the field of RS technologies, which should accelerate their integration in commercial products.

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Section: Discussion and Prospectsmentioning

confidence: 99%

Section: Endurance Characterization Methodsmentioning

confidence: 99%

Section: Endurance Characterization Methodsmentioning

confidence: 99%

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Standards for the Characterization of Endurance in Resistive Switching Devices

et al. 2021

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“…On the other hand, type II ECM RRAM in Fig. 9(b) was developed to offer low operation current with cell-built-in current compliance [23]. Hence, type II RRAM, shown in Fig.…”

Section: A Fast Selectormentioning

confidence: 99%

“…11. The memory ON/OFF ratio can be further amplified by a factor of >10 4 utilizing a novel sensing technique based on V H characteristic of a FAST selector [23], which offers various benefits, such as reduced power consumption and increased read bandwidth in high-density RRAM.…”

Section: B 1s1r Integrationmentioning

confidence: 99%

Cross-Point Resistive RAM Based on Field-Assisted Superlinear Threshold Selector

Jo¹,

Kumar²,

Narayanan³

et al. 2015

IEEE Trans. Electron Devices

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108

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We report a 3-D-stackable 1S1R passive cross-point resistive random access memory (RRAM). The sneak (leakage) current challenge in the cross-point RRAM integration has been overcome utilizing a field-assisted superlinear threshold selector. The selector offers high selectivity of >10 7 , sharp switching slope of <5 mV/decade, ability to tune the threshold voltage, stable operation at 125°C, and endurance of >10 11 . Furthermore, we demonstrate 1S1R integration in which the selectorsubthreshold current is <10 pA while offering >10 2 memory ON/ OFF ratio and >10 6 selectivity during cycling. Combined with self-current-controlled RRAM, the 1S1R enables high-density and high-performance memory applications.Index Terms-1S1R, cross-point memory, resistive random access memory (RRAM), select device, selectivity, sneak path.

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Nanoscale resistive switching memory devices: a review

2019

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In this review the different concepts of nanoscale resistive switching memory devices are described and classified according to their I–V behaviour and the underlying physical switching mechanisms. By means of the most important representative devices, the current state of electrical performance characteristics is illuminated in-depth. Moreover, the ability of resistive switching devices to be integrated into state-of-the-art CMOS circuits under the additional consideration with a suitable selector device for memory array operation is assessed. From this analysis, and by factoring in the maturity of the different concepts, a ranking methodology for application of the nanoscale resistive switching memory devices in the memory landscape is derived. Finally, the suitability of the different device concepts for beyond pure memory applications, such as brain inspired and neuromorphic computational or logic in memory applications that strive to overcome the vanNeumann bottleneck, is discussed.

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Self-limited RRAM with ON/OFF resistance ratio amplification

Cited by 12 publications

References 1 publication

Standards for the Characterization of Endurance in Resistive Switching Devices

Standards for the Characterization of Endurance in Resistive Switching Devices

Cross-Point Resistive RAM Based on Field-Assisted Superlinear Threshold Selector

Nanoscale resistive switching memory devices: a review

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