Self-limited SiH2Cl2 gas source molecular beam epitaxy on Si(100)

The evolution and equilibrium morphology of Si͑100͒ with 0.1 monolayer of adsorbed Cl was studied at 700 K with variable temperature scanning tunneling microscopy. Chlorine caused surface roughening with monolayer pits and regrowth islands. The aspect ratio of these features then increased with their size because of the surface-stress anisotropy. By analyzing the equilibrium feature shape as a function of size, we found that the ratio of step free energies for A-and B-type steps was F b /F a ϭ2.44 for regrowth islands and 3.33 for pits. These ratios are higher than for clean Si͑100͒, F b /F a ϭ2.13, because the steps are destabilized.

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Direct Identification of Critical Clusters in Chemical Vapor Deposition

Rauscher

Braun

Behm

2006

Phys. Rev. Lett.

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The kinetics of heteroepitaxial island nucleation on the Si(111) surface during ultrahigh vacuum chemical vapor deposition with the precursor GeH4 was studied by scanning tunneling microscopy. The results can be described within the framework of rate-equation based nucleation theory, modified by an additional energetic barrier for the attachment of adatoms at steps. This barrier results from the passivation of steps by dissociation products from the GeH4 precursor. A critical nucleus size of 9 atoms is derived. Scanning tunneling microscopy images provide direct evidence for the existence of stable clusters consisting of 10 atoms and allow the unequivocal identification of their structure.

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Self-limited SiH2Cl2 gas source molecular beam epitaxy on Si(100)

Cited by 4 publications

References 81 publications

Electronic modification of wet-prepared Si surfaces by a dichlorosilane reaction at elevated temperature

Electronic modification of wet-prepared Si surfaces by a dichlorosilane reaction at elevated temperature

Step free energies, surface stress, and adsorbate interactions for Cl-Si(100) at 700 K

Direct Identification of Critical Clusters in Chemical Vapor Deposition

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