2010 IEEE Radio Frequency Integrated Circuits Symposium 2010
DOI: 10.1109/rfic.2010.5477291
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Self-matched ESD cell in CMOS technology for 60-GHz broadband RF applications

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Cited by 13 publications
(3 citation statements)
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“…The total width of diode D P (D N ) is 60 μm, and distributes at Port A, Port B and Port X as listed in Table 1. An nmos transistor M 0 with a size of W / L = 80 μm/0.18 μm is employed to emulate the core circuit to be protected as shown in Figure 2 [12]. An additional version of the test circuit implementing the conventional dual‐diode circuit was also fabricated.…”
Section: Test Chipmentioning
confidence: 99%
“…The total width of diode D P (D N ) is 60 μm, and distributes at Port A, Port B and Port X as listed in Table 1. An nmos transistor M 0 with a size of W / L = 80 μm/0.18 μm is employed to emulate the core circuit to be protected as shown in Figure 2 [12]. An additional version of the test circuit implementing the conventional dual‐diode circuit was also fabricated.…”
Section: Test Chipmentioning
confidence: 99%
“…This result seems logical, since two 1 kV HBM protection devices are used in the final structure. Recently, a self-matched ESD cell library has been implemented for 60-GHz RF applications [8]. This ESD cell library has reached the 50-Ω input/output matching to reduce the design complexity for an RF circuit designer and to provide suitable ESD protection.…”
Section: Rf Broadband Measurementsmentioning
confidence: 99%
“…Its geometrical dimensions are 150 μm x 40 μm. Compared to [8], it can sustain about the same ESD target for some cells but its area is smaller and its operating frequency band is by far larger.…”
Section: Rf Broadband Measurementsmentioning
confidence: 99%