Self-mode-locked vertical-external-cavity surface-emitting laser

Rahimi‐Iman, Arash; Gaafar, Mahmoud; Möller, Christoph; Vaupel, M.; Zhang, Fan; Al-Nakdali, Dalia; Fedorova, Ksenia A.; Stolz, W.; Rafailov, Edik U.; Koch, Martin

doi:10.1117/12.2216469

Cited by 7 publications

(4 citation statements)

References 23 publications

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“…21 to obtain self-mode-locking and has been investigated numerically in Ref. 23 to support in principle Kerr-lens mode-locking for a defocusing nonlinear lens in the gain chip.…”

mentioning

confidence: 99%

Microcavity-enhanced Kerr nonlinearity in a vertical-external-cavity surface-emitting laser

Kriso¹,

Kress²,

Munshi³

et al. 2019

Opt. Express

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Self-mode-locking has become an emerging path to the generation of ultrashort pulses with vertical-external-cavity surface-emitting lasers. In our work, a strong Kerr nonlinearity that is so far assumed to give rise to mode-locked operation is evidenced and a strong nonlinearity enhancement by the microcavity is revealed. We present wavelength-dependent measurements of the nonlinear absorption and nonlinear-refractive-index change in a gain chip using the Z-scan technique. We report negative nonlinear refraction up to 1.5⋅10 -11 cm 2 /W in magnitude in the (InGa)As/Ga(AsP) material system close to the laser design wavelength, which can lead to Kerr lensing. We show that by changing the angle of incidence of the probe beam with respect to the gain chip, the Kerr nonlinearity can be wavelength-tuned, shifting with the microcavity resonance.Such findings may ultimately lead to novel concepts with regard to tailored self-mode-locking behavior achievable by peculiar Kerr-lens chip designs for cost-effective, robust and compact fspulsed semiconductor lasers.The Kerr effect is at the basis of many important device concepts like all-optical switching 1 , optical limiting 2 and soliton mode-locking of lasers and microresonators 3,4 . The capability to accurately measure and model the nonlinear refractive index changes associated with the Kerr effect is crucial for improved device operation, where a specifically tailored nonlinear refractive index is required, e.g. for the intensity-dependent Kerr lensing. Several measurement schemes have been developed in the past for the characterization of the nonlinear refractive index 5-7 , with the Z-scan technique 8 being undoubtedly the most prominent one due to its simplicity and high sensitivity. This method continues to be of high experimental value with the rise of novel material classes like graphene and other two-dimensional semiconductors which often exhibit a very strong refractive nonlinearity 9-11 .Kerr-lens mode-locked Ti:Sapphire lasers have dominated the field of ultra-short high-power modelocked lasers since their initial discovery nearly three decades ago 12,13 . In these lasers, the intensitydependent refractive index of the gain crystal leads to self-focusing of the laser beam for high intensities. When part of the continuous-wave (cw) beam profile is suppressed by inserting a slit into C. Kriso et al. (2018) 2

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“…21 to obtain self-mode-locking and has been investigated numerically in Ref. 23 to support in principle Kerr-lens mode-locking for a defocusing nonlinear lens in the gain chip.…”

mentioning

confidence: 99%

Microcavity-enhanced Kerr nonlinearity in a vertical-external-cavity surface-emitting laser

Kriso¹,

Kress²,

Munshi³

et al. 2019

Opt. Express

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“…In 2016, Quarterman et al measured the nonlinear lens coefficient of SDL gain chip [16]. Rahimi-Iman et al proposed the effect of several OP-SDLs parameters on the assumed nonlinear lensing behavior in a system [17]. Second, the existence of high-order transverse mode is beneficial for self-mode locking.…”

Section: Introductionmentioning

confidence: 99%

Switching of several self-mode-locking states in an optically pumped semiconductor disk laser

Zhuang,

Hua,

Tian

et al. 2023

Laser Phys. Lett.

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Self-mode-locking (SML) of fundamental TEM00 mode and high-order transverse mode were demonstrated in an optically pumped semiconductor disk laser and these states can be switched by simply adjusting the elements of the laser. The repetition rate of the pulse train was 1 GHz, using a straight cavity. Furthermore, we measured the pulse durations and found that the pulse duration of SML pulse with higher-order transverse mode is shorter than that of fundamental mode at the same pump power. To the best of our knowledge, this is the first experiment to obtain two SML states in a single laser. By using the method of changing the cavity length and adjusting the angle of the output coupler, the repetition rate can be continuously tuned from 3 GHz to 3.2 GHz.

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“…In 2016, Sieber et al proposed the effect of several OP-SDLs parameters of the assumed nonlinear lensing behavior in a system [8]. Since then, repetition rate tunable OP-SDLs with various cavity structures and different gain chip types have been reported [9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Repetition-rate-tunable second harmonic generation in mode-locked optically pumped semiconductor disk laser

Zhuang¹,

Hua²,

Tian³

et al. 2022

Laser Phys. Lett.

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We demonstrated a repetition-rate-tunable second harmonic mode-locked optically pumped semiconductor disk laser (OP-SDL), and the tuning range was from 1.168 GHz to 1.25 GHz. The entire tuning process was continuous, and OP-SDL was always in a mode-locked working state. To the best of our knowledge, this is the first work to obtain intracavity repetition rate tunable second harmonic laser in an OP-SDL. At same time, the repetition rate of fundamental wave can be continuously adjusted from 1.16 GHz to 1.66 GHz. The central wavelengths of the pulse trains were around 971 nm, and the highest repetition rate signal-to-noise ratio was more than 60 dB, indicating that the mode-locked pulses were stable.

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Self-mode-locked vertical-external-cavity surface-emitting laser

Cited by 7 publications

References 23 publications

Microcavity-enhanced Kerr nonlinearity in a vertical-external-cavity surface-emitting laser

Microcavity-enhanced Kerr nonlinearity in a vertical-external-cavity surface-emitting laser

Switching of several self-mode-locking states in an optically pumped semiconductor disk laser

Repetition-rate-tunable second harmonic generation in mode-locked optically pumped semiconductor disk laser

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