Self-organized growth of heterostructure nanocylinders by organometallic vapor phase epitaxy

VLS growth of GaAs/(InGa)As/GaAs axial double-heterostructure nanowires by MOVPE

“…Furthermore, structural and optical properties of GaAs/ (InGa)As/GaAs axial double-heterostructure NW have been studied [3,4]. Frequently, heterostructure growth is accompanied by characteristic phenomena like kinking, increased twin density, the formation of diffuse heterojunctions with alloy crystal gradients instead of abrupt interfaces [3,5], and growth along a side facet of the already grown NW [6,7]. However, sharp axial InAs/GaAs heterojunctions have been reported [8], which motivates a more detailed investigation of the composition of the alloy droplet and its influence on NW growth.…”

Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures

“…12 The details of heterointerface with a change in the group-III element should provide insight into NW growth and the role of the nanosized catalyst. Although the axial GaAs/InAs NW heterostructures have been reported earlier, 13,14 no detailed investigation of the GaAs/InAs heterointerfaces were given, though this information is important.…”

Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates

“…In this method, a large amount of nanowires possessing extremely small size and high quality is synthesized in a very short time scale with a rather simple approach. Very recently, control of the growth in the direction normal and parallel to the nanowires are reported to form complicated heterostructures, such as one-dimensional superlattices and/or coreshell structures [7][8][9].…”