Self‐organized growth of InN‐nanocolumns on p‐Si(111) by MBE

Abstract

InN‐nanocolumns are an attractive system for light harvesting applications. To understand the mechanism of self organized growth of nanocolumns in plasma assisted MBE, InN samples were produced under various conditions on p‐Si(111). Depending on the growth parameters different growth regimes for nanocolumns were identified according to their final shape. High‐resolution TEM pictures show a very good crystal quality. This is also confirmed by Raman and PL measurements. Nanocolumns with diameters of 20‐200 nm and lengths of up to 2 mm were produced. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Anisotropic optical response of GaN and AlN nanowires

“…[1] The plasma-assisted molecular beam epitaxy is capable of fabricating free-standing nanowires of GaN [2,3] and InN, [4] and with the physical vapor transport have fabricated AlN nanowires, [5,6,7] all of them with high crystalline quality. Several differences with the still widely investigated two-dimensional layers and quantum dots should be remarked.…”

High-Resolution Electron Microscopy of Semiconductor Heterostructures and Nanostructures

“…After this, important improvements were achieved regarding smaller sizes and higher densities [101][102][103][104][105][106][107], and recently the emission, even very poor, of InN QDs [108,109] and growth and optical properties of cubic InN dots [110] have been reported. Other types of InN nanostructures fabricated so far include single [111] and multiple [112][113][114][115] quantum wells, nanocolumns [116,117], and nanowires [118][119][120]. However, even if the number of publications related to these nanomaterials has increased considerably during the last years, the number of them including characterization by HRTEM still remains scarce.…”

“…Some of the results that will be described later in this section correspond to the first ones reported in the literature about structural and chemical characterization by (HR)TEM of InN QDs. This technique was also used to analyze the crystalline structure and quality [117], or the Si/InN and Si/AlN/InN interfaces in InN nanocolumns [116]; to confirm the cubic structure of the QDs [110] and the existence of oxide precipitates in InN nanostructures [121]; or to investigate the relaxation mechanisms of InN nanowires on GaN [120]. Our main contribution to the field is related to the characterization by means of electron beam-related techniques of uncapped and GaN-capped InN QD heterostructures grown on GaN/Sapphire substrates by metalorganic vapor phase epitaxy [98].…”

Electrical Characterization of InN Nanowire/Si Heterojunctions

“…[6] However, heteroepitaxial growth always suffers from lattice and thermal mismatch of both materials, which makes the fabrication of high quality InN films directly on Si challenging. One possibility to improve the crystal quality of InN is the growth of InN nanowires (NWs), [2,[7][8][9][10][11][12][13][14][15] as the lattice mismatched strain can relax through the NW sidewalls because of their small footprint. Moreover, the large surface to volume ratio of NWs favors sensing applications.…”