Self-passivated ultra-thin SnS layers<i>via</i>mechanical exfoliation and post-oxidation

Higashitarumizu, Naoki; Kawamoto, Hayami; Nakamura, Masaru; Shimamura, Kiyoshi; Ohashi, Naoki; Ueno, K.; Nagashio, Kosuke

doi:10.1039/c8nr06390g

Cited by 45 publications

(72 citation statements)

References 80 publications

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“…1a, b), leaving the lone pair electrons in the Sn atoms. The lone pair electrons contribute to the strong interlayer force 36,37 . Therefore, the in situ observation of SnS growth has confirmed a very high growth rate in the perpendicular direction 38 .…”

Section: Resultsmentioning

confidence: 99%

Purely in-plane ferroelectricity in monolayer SnS at room temperature

Higashitarumizu¹,

Kawamoto²,

Lee³

et al. 2020

Nat Commun

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2D van der Waals ferroelectrics have emerged as an attractive building block with immense potential to provide multifunctionality in nanoelectronics. Although several accomplishments have been reported in ferroelectric switching for out-of-plane ferroelectrics down to the monolayer, a purely in-plane ferroelectric has not been experimentally validated at the monolayer thickness. Herein, an in-plane ferroelectricity is demonstrated for micrometersize monolayer SnS at room temperature. SnS has been commonly regarded to exhibit the odd-even effect, where the centrosymmetry breaks only in the odd-number layers to exhibit ferroelectricity. Remarkably, however, a robust room temperature ferroelectricity exists in SnS below a critical thickness of 15 layers with both an odd and even number of layers, suggesting the possibility of controlling the stacking sequence of multilayer SnS beyond the limit of ferroelectricity in the monolayer. This work will pave the way for nanoscale ferroelectric applications based on SnS as a platform for in-plane ferroelectrics.

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Section: Resultsmentioning

confidence: 99%

Purely in-plane ferroelectricity in monolayer SnS at room temperature

Higashitarumizu¹,

Kawamoto²,

Lee³

et al. 2020

Nat Commun

Self Cite

280

261

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“…The high‐resolution spectra of S can be fitted by a mixed Gaussian–Lorentzian asymmetric line shape function. Each S 2p peak consists of a 2p 3/2 (160.9 eV)–2p 1/2 (162.0 eV) doublet with a 1.1 eV splitting due to the spin–orbit coupling 46. Similar to the case of the Sn 3d peaks, the S 2p peaks of 2 and 5 ML SnS show a 0.6 and a 0.5 eV upward BE shift, and no S 2p peaks of SnS 2 are detected at 164 eV.…”

Section: Resultsmentioning

confidence: 99%

“…Moreover, most of prepared SnS films are polycrystalline with various crystalline orientations, making it difficult to control the carrier transport and resulting in a negative influence on the FET performance. Higashitarumizu et al46 fabricated 0.7 nm and 9 ML FETs with SnS material obtained by mechanical exfoliation. These FETs have a similar performance when compared to our 2 ML and 10 ML FETs with the SnS material obtained by PLD.…”

Section: Resultsmentioning

confidence: 99%

Layer‐Dependent Optoelectronic Properties of 2D van der Waals SnS Grown by Pulsed Laser Deposition

Wang

Zhang

Seliverstov

et al. 2019

Adv Elect Materials

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Layered metal monochalcogenides have attracted significant interest in the 2D family since they show different unique properties from their bulk counterparts. The comprehensive synthesis, characterization, and optoelectrical applications of 2D‐layered tin monosulfide (SnS) grown by pulsed laser deposition are reported. Few‐layer SnS‐based field‐effect transistors (FETs) and photodetectors are fabricated on Si/SiO2 substrates. The premium 2D SnS FETs yield an on/off ratio of 3.41 × 106, a subthreshold swing of 180 mV dec−1, and a field effect mobility (µFE) of 1.48 cm2 V−1 s−1 in a 14‐monolayer SnS device. The layered SnS photodetectors show a broad photoresponse from ultraviolet to near‐infrared (365–820 nm). In addition, the SnS phototransistors present an improved detectivity of 9.78 × 1010 cm2 Hz1/2 W−1 and rapid response constants of 60 ms for grow‐time constant τg and 10 ms for decay‐time constant τd under extremely weak 365 nm illumination. This study sheds light on layer‐dependent optoelectronic properties of 2D SnS that promise to be important in next‐generation 2D optoelectronic devices.

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“…To further confirm the growth of monochalcogenide SnS layers, Raman spectroscopy was performed which shows active vibrational modes at 94.21, 185.61, and 219.6 cm −1 that can be assigned to the A g phonon modes and the peak at 158.21 cm −1 assigned to B 3g orthorhombic mode of layered SnS (Figure 1g). [ 20,25 ] The Raman spectra obtained from the layers before and after device fabrication were identical and did not show any discernible change. The Raman peaks only show the vibrational modes associated with SnS.…”

Section: Figurementioning

confidence: 92%

“…[ 17–19 ] Strong inter layer interactions resulting from lone pair electrons associated with each S atom is a prominent reason for the inability to isolate ultrathin layers of SnS [ 6 ] using established mechanical cleaving processes. These interactions are stronger than the vdW forces exhibited between SnS layers, [ 20 ] that generate substantial energy distribution and strong charge transfer resulting in electronic coupling between adjacent layers. [ 20,21 ] Low‐temperature liquid metals present an opportunity to obtain ultrathin layers [ 22,23 ] with relatively large lateral dimensions.…”

Section: Figurementioning

confidence: 99%

Liquid‐Metal Synthesized Ultrathin SnS Layers for High‐Performance Broadband Photodetectors

et al. 2020

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Atomically thin materials face an ongoing challenge of scalability, hampering practical deployment despite their fascinating properties. Tin monosulfide (SnS), a low‐cost, naturally abundant layered material with a tunable bandgap, displays properties of superior carrier mobility and large absorption coefficient at atomic thicknesses, making it attractive for electronics and optoelectronics. However, the lack of successful synthesis techniques to prepare large‐area and stoichiometric atomically thin SnS layers (mainly due to the strong interlayer interactions) has prevented exploration of these properties for versatile applications. Here, SnS layers are printed with thicknesses varying from a single unit cell (0.8 nm) to multiple stacked unit cells (≈1.8 nm) synthesized from metallic liquid tin, with lateral dimensions on the millimeter scale. It is reveal that these large‐area SnS layers exhibit a broadband spectral response ranging from deep‐ultraviolet (UV) to near‐infrared (NIR) wavelengths (i.e., 280–850 nm) with fast photodetection capabilities. For single‐unit‐cell‐thick layered SnS, the photodetectors show upto three orders of magnitude higher responsivity (927 A W−1) than commercial photodetectors at a room‐temperature operating wavelength of 660 nm. This study opens a new pathway to synthesize reproduceable nanosheets of large lateral sizes for broadband, high‐performance photodetectors. It also provides important technological implications for scalable applications in integrated optoelectronic circuits, sensing, and biomedical imaging.

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Self-passivated ultra-thin SnS layersviamechanical exfoliation and post-oxidation

Abstract: An SnS layer with a monolayer thickness was realized with a stable SnOx passivation layer via mechanical exfoliation, followed by moderate oxygen annealing.

Cited by 45 publications

References 80 publications

Purely in-plane ferroelectricity in monolayer SnS at room temperature

Purely in-plane ferroelectricity in monolayer SnS at room temperature

Layer‐Dependent Optoelectronic Properties of 2D van der Waals SnS Grown by Pulsed Laser Deposition

Liquid‐Metal Synthesized Ultrathin SnS Layers for High‐Performance Broadband Photodetectors

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