Self-powered photodetectors based on a ZnTe–TeO2 composite/Si heterojunction with ultra-broadband and high responsivity

Low‐dimensional nanomaterial/Si heterostructure‐based photodetectors

“…Based on the different bandgap characteristics of ZnTe, TeO 2 , and Si, Liu et al first developed a ZnTe-TeO 2 composite/n-Si heterojunction photodetector with a broadband photoresponsivity from the UV to the NIR. 107 The detector exhibited a photoresponsivity of 75 mA W −1 , fast rise/decay times (<0.61 second/<0.61 second), and a light detectivity of 1.4 × 10 13 Jones under 850 nm light at zero bias. In addition, the as-grown films with highly defective structures lead to a very small photoresponse.…”

“…In contrast, when a positive bias is applied to β‐Ga 2 O 3 , photogenerated holes can easily transfer to the p‐Si, and thus, a high responsivity can be realized under 254 nm illumination. Based on the different bandgap characteristics of ZnTe, TeO 2 , and Si, Liu et al first developed a ZnTe‐TeO 2 composite/n‐Si heterojunction photodetector with a broadband photoresponsivity from the UV to the NIR . The detector exhibited a photoresponsivity of 75 mA W −1 , fast rise/decay times (<0.61 second/<0.61 second), and a light detectivity of 1.4 × 10 13 Jones under 850 nm light at zero bias.…”

Strategy of All-Inorganic Cs3Cu2I5/Si-Core/Shell Nanowire Heterojunction for Stable and Ultraviolet-Enhanced Broadband Photodetectors with Imaging Capability

“…In this regard, using Si nanostructures as the photoactive layer has been proved to be an effective strategy because the nanostructured geometries can combine the advantages of suppressing the light reflection, increasing the interfacial area, and extending the carrier lifetime. , Unfortunately, this method will play a role but still cannot perfectly solve the above issues, and the photoresponsivity in the UV region is far inferior to that in the visible and near-infrared regions. Under this circumstance, constructing heterojunctions with complementary semiconductors to capitalize on the unique properties of the latter becomes an alternative approach, such as wide bandgap Ga­(Al)­N, Zn­(Mg)­O, and Ga 2 O 3 . − However, the Ga­(Al)N and Ga 2 O 3 photoactive materials were frequently prepared via high-temperature and high-vacuum as well as high-cost techniques for thin film growth, such as metal–organic chemical vapor deposition, magnetron sputtering, and molecular beam epitaxy. ,, Hence, it is significant to find low-cost and readily available materials to integrate with Si for UV-enhanced photodetectors.…”

Enhanced self-powered UV photodetection from X chromosome-shaped Cs3Cu2I5microcrystals

“…The method of using complementary wide-bandgap semiconductors like Ga(Al)N, Ga 2 O 3 and Zn(Mg)O to construct heterojunctions would effectively improve the UV photodetection capacity and wavelength selectivity of the Si-based UV PDs. [26][27][28][29] Nevertheless, the synthesis of some of the above wide-bandgap semiconductors requires ultra-high vacuum equipment. Thus, it is greatly desired to find a new sort of low-cost wide-bandgap semiconductor material that can be easily prepared and integrated with Si for UV-enhanced PDs.…”