Self-powered UV photodetectors based on ZnO nanomaterials

Abstract

Self-powered photodetectors can work with low power consumption or even without any supply from external power sources, and they are recognized as one of the developing trends of next-generation optoelectronic devices. As one of the most-known n-type metal oxides applied in electronic devices, ZnO nanostructures and their heterostructures with other appropriate materials have been widely applied in the assembly of self-powered UV photodetectors. In this review, the recent research on different types of ZnO-based self-powered UV photodetectors is outlined. ZnO nanostructures with different dimensionalities adopted in these photodetectors are discussed in detail. The influences of specific effects, such as the piezo-phototronic effect, the pyro-phototronic effect, the photo-gating effect, and even their fusions, on modulating the self-powered photo-response of these photodetectors have also been demonstrated. The applications of these photodetectors in UV sensing, environmental recognition, wearable devices, functional devices, and light communication are displayed. Finally, possible opportunities and directions for the future developments of these photodetectors are proposed.

Advances in Self-Powered Ultraviolet Photodetectors Based on P-N Heterojunction Low-Dimensional Nanostructures

“…However, compared with the current commercial UV photodetectors, the main performance of the self-powered UV photodetectors (such as responsivity, response time, quantum efficiency, etc.) needs to be further improved [ 31 , 32 , 33 , 34 , 35 ]. In this paper, some frontier research progress in the material design and device testing of the different aspects of the p-n heterojunction low-dimensional nanostructures to improve the self-powered UV photodetector performance in recent years are summarized and analyzed.…”

Broadband wavelength-selective isotype heterojunction n+-ZnO/n-Si photodetector with variable polarity

“…Zinc oxide (ZnO) is a very promising material for optoelectronic and transparent electronic applications due to its wide bandgap (3.37 eV), which is direct and therefore suitable for optoelectronics, its large exciton binding energy at room temperature (60 meV), and its high transparency (>80%) in the visible spectral range. [1]- [5] Recently, there has been a vigorous interest for the development of ZnO-based UV photodetectors which can work without bias from an external power supply. [5], [6], [7], [8] Self-powered photodetection is desirable for the development of Visible Light Communication (VLC) systems, Internet of Things (IoT) systems, triboelectric nanogenerators, etc.…”

“…[1]- [5] Recently, there has been a vigorous interest for the development of ZnO-based UV photodetectors which can work without bias from an external power supply. [5], [6], [7], [8] Self-powered photodetection is desirable for the development of Visible Light Communication (VLC) systems, Internet of Things (IoT) systems, triboelectric nanogenerators, etc. [5], [6], [9], [10] However, the development of blue-UV optoelectronic devices based on ZnO homojunctions is hindered by the difficulty in introducing reproducibly high-quality p-type impurities in ZnO, which exhibits intrinsically n-type conductivity due to bulk defects, such as oxygen vacancies and zinc interstitials.…”

“…[5], [6], [7], [8] Self-powered photodetection is desirable for the development of Visible Light Communication (VLC) systems, Internet of Things (IoT) systems, triboelectric nanogenerators, etc. [5], [6], [9], [10] However, the development of blue-UV optoelectronic devices based on ZnO homojunctions is hindered by the difficulty in introducing reproducibly high-quality p-type impurities in ZnO, which exhibits intrinsically n-type conductivity due to bulk defects, such as oxygen vacancies and zinc interstitials. [1], [3], [4] Therefore, ZnO is usually combined with p-doped semiconductors, most commonly with silicon, which is a narrow-bandgap material and extends the operation of ZnO optoelectronic devices to the visible-near infrared (vis-NIR) spectral range.…”

Study on the nanoscale current of ZnO film by photoassisted peak force tunnel atomic force: A novel technique for UV detection

“…Zinc oxide (ZnO) is one of the most promising metal oxides as a type of n-type semiconductor, owing to its direct wide band-gap energy of 3.37 eV and high exciton binding energy of 60 meV. 1 It has wide application in ultraviolet (UV) detector, [2][3][4][5] gas sensor, 6,7 solar cells, 8,9 quantum dot light-emitting diodes (QLEDs), 10,11 and so on. In particular, ZnO-based UV sensor caused much attention thanks to the nontoxic and low cost of ZnO.…”