Self-pulsation in InGaN laser diodes with saturable absorber layers

Ohno, Tomoki; Ito, Shigetoshi; Kawakami, Tomoaki; Taneya, M.

doi:10.1063/1.1599622

Cited by 17 publications

(15 citation statements)

References 12 publications

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“…Within the quantum well thickness range from 1 to 6 nm, the carrier lifetime was found to increase from 180 to 340 ps. It has been suggested previously [24] that self-pulsating operation would occur in an InGaN laser with a very short carrier lifetime in the SA. In that work, two lasers were fabricated with the same structure except that one had an additional 20 nm p-type GaN layer between the AlGaN evaporation prevention layer and the SA layer.…”

Section: Resultsmentioning

confidence: 99%

“…This difference in behavior may be a result of the different carrier lifetimes in the active region and in the SA. In some of our devices, the SA layer has an interface with the AlGaN evaporation prevention layer [24] and this may reduce the carrier lifetime in the SA due to interfaceinduced nonradiative recombination. Also we found that such a bifurcation diagram with generation of SP through a Hopf bifurcation is appropriate for lasers with a short cavity length.…”

Section: Resultsmentioning

confidence: 99%

“…In the fabrication process, the saturable absorber layer was grown as a layer parallel to the active region, which is different from the situation treated in previous papers where the SA's were grown perpendicular to the active region [20][21][22][23]. Further details on the fabrication method are given by Ohno et al [24]. The lasing wavelength is at 395 nm and three different cavity *Email address: tronciu@ec.t.kanazawa-u.ac.jp To model the laser properties we used the Yamada model [20,21] adapted to the specific case of the InGaN laser with saturable absorber incorporated as a layer parallel to active region.…”

Section: Introductionmentioning

confidence: 99%

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Analysis of the dynamics of a blue-violetInxGa1−xNlaser with a saturable absorber

2004

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Additional information: Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. We report the results of numerical investigations of the dynamical behavior of a blue-violet InGaN laser with a specially incorporated saturable absorber. We have identified the nature of the bifurcation that occurs in the device dynamics and also the conditions that are necessary for self-pulsating and excitable operations. We also demonstrate the influence of the relevant device parameters on the laser dynamics and show how the properties of the saturable absorber and its position in the device have a considerable influence on the laser behavior. Finally theoretical investigations of the excitable behavior and a confirmation of the excitability properties of an InGaN laser are presented and discussed.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Analysis of the dynamics of a blue-violetInxGa1−xNlaser with a saturable absorber

2004

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“…1. The theoretical analysis is based on structure of actually fabricated laser samples [12], [13]. The model consists of the InGaN active layer and a p-type InGaN layer as an SA.…”

Section: Laser Structure Model and Equationsmentioning

confidence: 99%

Self-pulsation in an InGaN laser-theory and experiment

Tronciu

Yamada

Ohno³

et al. 2003

IEEE J. Quantum Electron.

Self Cite

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Abstract-Room-temparature operation of self-pulsating InGaN lasers was obtained at a wavelength of 395 nm. The laser structure consists of a multiquantum-well InGaN active layer and a p-type InGaN single-quantum-well saturable absorber. The frequency range of the self-pulsation was from 1.6 to 2.9 GHz. The experimental results were well explained with our theoretical analysis. We found that features of the saturable absorber strongly affect the self-pulsation. Influence of device and material parameters on the laser dynamics was also investigated.Index Terms-Room temperature, saturable absorber, self-pulsation, violet InGaN laser.

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“…High-brightness light emitting diodes (LEDs) and high-power laser diodes (LDs) based on these materials are already commercially available. With the emergence of white LEDs [1], high-density memory devices [2], and high-power microelectronics [3], a more fundamental understanding of Group III-nitride device performance is needed. This information is especially critical for the design and fabrication of advanced devices that include ternary and quaternary alloys.…”

Section: Introductionmentioning

confidence: 99%

Effect of gallium nitride template layer strain on the growth of InxGa1-xN∕GaN multiple quantum well light emitting diodes

Johnson

Bourret-Courchesne

et al. 2004

Journal of Applied Physics

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GaN template layer strain effects were investigated on the growth of InGaN/GaN LED devices. Seven period InGaN/GaN multiple quantum well structures were deposited on 5µm and 15µm GaN template layers. It was found that the electroluminescence emission of the 15µm device was red-shifted by approximately 132meV. Triple-axis X-Ray Diffraction and Cross-Sectional Transmission Electron Microscopy show that the 15µm templay layer device was virtually unstrained while the 5µm layer experienced tensile strain. Dynamic Secondary Ion Mass Spectrometry depth profiles show that the 15µm template layer device had an average indium concentration of 11% higher than that of the 5µm template layer device even though the structures were deposited during the same growth run. It was also found that the 15µm layer device had a higher growth rate than the 5µm template layer device. This difference in indium concentration and growth rate was due to changes in thermodynamic limitations caused by strain differences in the template layers.

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Self-pulsation in InGaN laser diodes with saturable absorber layers

Cited by 17 publications

References 12 publications

Analysis of the dynamics of a blue-violetInxGa1−xNlaser with a saturable absorber

Analysis of the dynamics of a blue-violetInxGa1−xNlaser with a saturable absorber

Self-pulsation in an InGaN laser-theory and experiment

Effect of gallium nitride template layer strain on the growth of InxGa1-xN∕GaN multiple quantum well light emitting diodes

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