Self-Recovery Tolerance Latch Design Based on the Radiation Mechanism

Abstract

Digital latches are becoming more sensitive to Multiple-Node Upsets (MNUs) due to lower supply voltage and higher integration density of devices. The hardening technique based on using multiple C-Elements (CEs) (the CE acts as an inverter if its inputs are equal to each other, otherwise holds the highimpedance output) has been used to propose the MNU tolerance latches. However, it brings important hardware overheads. Based on the radiation mechanism, this paper proposes an MNU tolerance latch with self-recovery properties to prevent Singe Node Upset (SNU) and MNU propagation in the feedback loops, and providing the smallest overheads in terms of power, delay, rising time tr, falling time tf and Power-Delay-Area-Product (PDAP) metric compared with the existing MNU tolerance latches. INDEX TERMS Hardening, upset, tolerance, radiation-induced voltage pulse, latch.

Novel radiation-hardened latch design for space-radiation environments

“…In the research neighborhood of anti-radiation reinforcement of storage circuits, there are SRAM cells and latches, etc. At present, the reinforcement of latches is mainly through the construction of multiple feedback loops, such as: DNUCT [14], DNURHL [15], HSMUF [16], MT [17], FERST [18], etc. They have certain resistance to SNU, but due to the complexity of the process, which is not conducive to the operation of high-performance chips.…”