Self-Rectifying Resistive Switching Memory with Ultralow Switching Current in Pt/Ta2O5/HfO2-x /Hf Stack

Ma, Haili; Feng, Jiangshan; Lv, Hangbing; Gao, Tian; Xu, Xiaoxin; Luo, Qing; Gong, Tiancheng; Yuan, Peng

doi:10.1186/s11671-017-1905-3

Cited by 19 publications

(14 citation statements)

References 15 publications

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“…However, because a single terminal is used to turn on the selector, read, and program the memory cell, the independent operation of each of the two series elements may be challenging unless the selector is specifically tailored to the memory cell or vice versa. An alternative is to use self-rectifying memory cells (SRMCs) which are single memory cells, whose highly nonlinear and asymmetric current–voltage ( I – V ) behavior alone enables the current sensing amplifier to distinguish between chosen and unchosen cells 24 – 30 . SRMCs have attracted significant attention because of their simplicity in bit-cell structure and thus potential compatibility with three-dimensional memory structure, enriching candidates for SRMCs, for example, NbO x /TiO x /NbO x 26 , TiO 2 /HfO 2 29 , Ta 2 O 5 /HfO 2-x 24 , and Al-doped HfO 2 27 .…”

Section: Introductionmentioning

confidence: 99%

“…An alternative is to use self-rectifying memory cells (SRMCs) which are single memory cells, whose highly nonlinear and asymmetric current–voltage ( I – V ) behavior alone enables the current sensing amplifier to distinguish between chosen and unchosen cells 24 – 30 . SRMCs have attracted significant attention because of their simplicity in bit-cell structure and thus potential compatibility with three-dimensional memory structure, enriching candidates for SRMCs, for example, NbO x /TiO x /NbO x 26 , TiO 2 /HfO 2 29 , Ta 2 O 5 /HfO 2-x 24 , and Al-doped HfO 2 27 . Albeit excellent in most aspects, each has shortcomings that hinder it from being a promising candidate for an SRMC.…”

Section: Introductionmentioning

confidence: 99%

“… Memory capacity Read power (nW) Read latency Non-volatility CMOS compatibility Selectivity (I @V op /I @-1/3V op ) Multibit operation LRS HRS Retention Max. supply voltage First priority This work ~10 4 2 bits 4 0.8 <10 μs >10 4 s (cumulative) ≤5 V Haili et al 24 ~10 4 – 0.5 5 × 10 −3 – >10 4 s – Yoon et al 25 ~10 4 – 80 8 × 10 −3 – >10 4 – Kim et al 26 ~2 × 10 4 – 0.6 3 × 10 −3 – >10 4 – Huang et al 27 ~3 × 10 2 – 1.4 0.2 – >10 4 ≤4 V Zhou et al 28 ~10 2 2 bits 0.3 2 × 10 −3 – >10 4 ≤4 V Hsu et al 29 ~10 3 2 bits 2 2 × 10 3 – >10 4 – Chou et al 30 ~3×10 4 – 1.2 2 × 10 3 – …”

Section: Introductionmentioning

confidence: 99%

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Self-rectifying resistive memory in passive crossbar arrays

et al. 2021

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Conventional computing architectures are poor suited to the unique workload demands of deep learning, which has led to a surge in interest in memory-centric computing. Herein, a trilayer (Hf0.8Si0.2O2/Al2O3/Hf0.5Si0.5O2)-based self-rectifying resistive memory cell (SRMC) that exhibits (i) large selectivity (ca. 104), (ii) two-bit operation, (iii) low read power (4 and 0.8 nW for low and high resistance states, respectively), (iv) read latency (<10 μs), (v) excellent non-volatility (data retention >104 s at 85 °C), and (vi) complementary metal-oxide-semiconductor compatibility (maximum supply voltage ≤5 V) is introduced, which outperforms previously reported SRMCs. These characteristics render the SRMC highly suitable for the main memory for memory-centric computing which can improve deep learning acceleration. Furthermore, the low programming power (ca. 18 nW), latency (100 μs), and endurance (>106) highlight the energy-efficiency and highly reliable random-access memory of our SRMC. The feasible operation of individual SRMCs in passive crossbar arrays of different sizes (30 × 30, 160 × 160, and 320 × 320) is attributed to the large asymmetry and nonlinearity in the current-voltage behavior of the proposed SRMC, verifying its potential for application in large-scale and high-density non-volatile memory for memory-centric computing.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Self-rectifying resistive memory in passive crossbar arrays

et al. 2021

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“…[11,35] It should be noted that the self-rectifying feature of memristors is crucial for overcoming the crosstalk problems in crosspoint array structures. [36][37][38] Let us directly demonstrate the effect of the self-rectifying characteristics of Device 2 on the crosstalk problems in the crosspoint structure. We fabricated a prototype array of 2 × 2 Device 2 (see Figure S6, Supporting Information) and performed the actual addressing test in the worst-case scenario in which the cells near the selected device were set to the LRS (case 2 in Figure S7, Supporting Information).…”

Section: Resultsmentioning

confidence: 99%

Introduction of Interfacial Load Polymeric Layer to Organic Flexible Memristor for Regulating Conductive Filament Growth

Park

Kim

Lee

2020

Adv Elect Materials

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In flexible neuromorphic electronics, solution‐processed organic memristors are important elements to perform memory functions. Despite considerable development for improving performances of organic memristors, the devices still exhibit the poor reliability and uniformity due to the stochastic characteristics of the conductive filament (CF) growth. Herein, the effective concept of introducing the interfacial load polymer (ILP) layers that control the CF growth in flexible organic memristors is demonstrated. In the flexible organic memristor, the ILP serves as an internal load resistor that regulates the CF growth in the electrolyte medium and the electron blocking layer, hence realizing self‐rectifying characteristics. In particular, the ILP provides the self‐compliance current of the device, which delicately limits the overgrowth of CFs. The flexible device delivers higher electrical performance (better reliability, uniformity, and the switching currents) than conventional devices without the ILP. Moreover, the device operates stably under repeated bending–straightening deformations. This unprecedented concept of achieving the capabilities of self‐compliance current and self‐rectifying property in a single memristor will provide a practical platform for constructing and realizing next‐generation flexible neuromorphic systems.

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“…Most frequently common resistive switching mechanisms proposed in RRAM devices can be categorized into oxygen ions-based oxide RRAM (OxRRAM) and conductive bridge RAM (CBRAM) [6]. In OxRRAM, the resistive switching mechanism is governed by formation and annihilation of conductive filaments formed by either oxygen vacancies or movement of ions inside the RRAM devices [7]. However, in CBRAM, a metal cation is necessary to develop resistive switching behavior by constructing and destructing the conductive bridges formed through electrochemical process [8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Oxygen annealing effect on resistive switching characteristics of multilayer CeO₂/Al/CeO₂ resistive random-access memory

Ismail

Khan

Rahmani

et al. 2020

Mater. Res. Express

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Cerium oxide-based memristors have been extensively studied because of their compatibility with CMOS technology. Yet, inconsistency of resistive switching parameters is one of the main contests in development of nonvolatile memory for commercialization. Owing to filamentary nature of the resistive switching devices, variability of the resistive switching characteristics can be reduced by doping, where conductive filaments can easily grow due to reduction in the formation energy of oxygen vacancies. In this work, multilayer CeO 2 /Al/CeO 2 films were prepared through radiofrequency (rf) sputtering at room temperature to study the effect of oxygen annealing on the resistive switching characteristics. Device with CeO 2 /Al/CeO 2 multilayer structure after annealing exhibits reduction of defects and improved switching endurance, good data retention, and uniformity in operational parameters. The resistive switching characteristics have been simulated using space charge limited conduction and Schottky emission at high field region of the high resistance state, which is well fitted by linear curve fitting analysis. Improvement in the switching characteristics revealed that Al charge trapping layer has diffused into the CeO 2 matrix, which might have resulted in lower density of oxygen vacancies due to oxygen annealing. Experimental I-V analysis indicate that oxygen annealing is an effective approach to enhance the switching characteristics of RRAM devices.

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Self-Rectifying Resistive Switching Memory with Ultralow Switching Current in Pt/Ta2O5/HfO2-x /Hf Stack

Cited by 19 publications

References 15 publications

Self-rectifying resistive memory in passive crossbar arrays

Self-rectifying resistive memory in passive crossbar arrays

Introduction of Interfacial Load Polymeric Layer to Organic Flexible Memristor for Regulating Conductive Filament Growth

Oxygen annealing effect on resistive switching characteristics of multilayer CeO₂/Al/CeO₂ resistive random-access memory

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Self-Rectifying Resistive Switching Memory with Ultralow Switching Current in Pt/Ta2O5/HfO2-x /Hf Stack

Cited by 19 publications

References 15 publications

Self-rectifying resistive memory in passive crossbar arrays

Self-rectifying resistive memory in passive crossbar arrays

Introduction of Interfacial Load Polymeric Layer to Organic Flexible Memristor for Regulating Conductive Filament Growth

Oxygen annealing effect on resistive switching characteristics of multilayer CeO2/Al/CeO2 resistive random-access memory

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Oxygen annealing effect on resistive switching characteristics of multilayer CeO₂/Al/CeO₂ resistive random-access memory