Self-sticking coefficients of SiO2 films deposited through rf sputtering

Jones, R. E.; Standley, C. L.; Maissel, L. I.

doi:10.1016/0042-207x(67)93167-3

Cited by 2 publications

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“…In fact, re-emission of zinc oxide is well-known with resputtering coefficients for zinc oxide reported to be as high as 0.3 . Under appropriate conditions and geometries, significant quantities of material can be deposited in areas not in line-of-site of the source ,− , and the deposits are reportedly loosely packed , as is the case in the current work. However, re-emission from the surface is not sufficient on its own to explain the ring-shaped deposits of zinc oxide described here because the rings were not formed when the gold under-layer was absent.…”

Section: Resultssupporting

confidence: 60%

“…In fact, re-emission of zinc oxide is well-known with re-sputtering coefficients for zinc oxide reported to be as high as 0.3 (25). Under appropriate conditions and geometries, significant quantities of material can be deposited in areas not in line-of-site of the source (24,(26)(27)(28)(29)(30)(31) and the deposits are reportedly loosely packed (25), as is the case in the current work.…”

Section: Resultssupporting

confidence: 58%

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Exploiting Zinc Oxide Re-emission to Fabricate Periodic Arrays

Coutts

Zareie

Cortie

et al. 2010

ACS Appl. Mater. Interfaces

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The synthesis of hexagonal ring-shaped structures of zinc oxide using nanosphere lithography and metal/metal oxide sputtering is demonstrated. This synthesis exploits the surface re-emission of zinc oxide to deposit material in regions lying out of the line-of-sight of the sputtering source. These rings can nucleate the hydrothermal growth of zinc oxide crystals. Control over the growth could be exercised by varying growth solution concentration or temperature or by applying an external potential.

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Section: Resultssupporting

confidence: 60%

Section: Resultssupporting

confidence: 58%

Exploiting Zinc Oxide Re-emission to Fabricate Periodic Arrays

Coutts

Zareie

Cortie

et al. 2010

ACS Appl. Mater. Interfaces

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“…The most extensive work has been done by James and Carter," who conclude that the predominant mechanism in their system is direct gas sputtering. However, it is known that Si0 2 is resputtered during deposition by rf sputtering, 7 so that in this instance the glass sputtering mechanism for releasing argon may also be important.…”

Section: Theoreticalmentioning

confidence: 99%

Argon Content of SiO₂ Films Deposited by RF Sputtering in Argon

Schwartz

Jones

1970

IBM J. Res. & Dev.

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When Si0 2 is deposited by sputtering in an argon rf glow discharge, the films so produced contain considerable amounts of trapped argon, as determined by x-ray fluorescence analysis. This argon content was measured as a function of various sputtering parameters: argon pressure, rf power, electrode spacing, substrate temperature, and magnetic field, the latter two being most influential. A simple theoretical model for the capture and release of argon is presented which explains an observed linear decrease of the argon concentration in SiOz with increasing temperature. Incorporation of argon into the sputtered SiO. film does not seem to impair the film's ability to act as a good passivating and insulating layer.where 0"8 is the cross section for sputtering. Thus, while reflection of argon from filled sites, Eq. (1), and bombardment-induced re-emission, Eq. (2), are introduced as separate processes, their effects are indistinguishable.The impinging Si0 2 continuously buries sorbed argon, providing a fresh surface for further gas sorption.By using an argon-free glass surface, the rate of argon capture has been found to be proportional to the bombardment rate of argon ions." The capture process can be visualized: an incoming energetic argon ion or atom can strike the surface, either at an empty site where it will stick, or at an occupied site where it will be reflected. The net rate of argon capture can be written as:where / is the flux of energetic argon, 0" c is a proportionality constant or capture cross section, flo is the number of potential capture sites, and n is the number of filled sites.The release of sorbed gas by ion bombardment has been demonstrated clearly in experiments where one inert gas is used to recover another gas that had been previously sorbed." During the recovery process, the second gas is itself sorbed on the surface. Thus, the rate of sputtering re-emission can be given as (2) (1) luAno -n),

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Self-sticking coefficients of SiO2 films deposited through rf sputtering

Cited by 2 publications

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Exploiting Zinc Oxide Re-emission to Fabricate Periodic Arrays

Exploiting Zinc Oxide Re-emission to Fabricate Periodic Arrays

Argon Content of SiO₂ Films Deposited by RF Sputtering in Argon

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Self-sticking coefficients of SiO2 films deposited through rf sputtering

Cited by 2 publications

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Exploiting Zinc Oxide Re-emission to Fabricate Periodic Arrays

Exploiting Zinc Oxide Re-emission to Fabricate Periodic Arrays

Argon Content of SiO2 Films Deposited by RF Sputtering in Argon

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Argon Content of SiO₂ Films Deposited by RF Sputtering in Argon