Self-trapping of the d-d charge transfer exciton in bulk NiO evidenced by X-ray excited luminescence

Sokolov, V. I.; Пустоваров, В. А.; Churmanov, V. N.; Ivanov, V. Yu.; Gruzdev, N. B.; Соколов, П. С.; Баранов, А. Н.; Moskvin, A. S.

doi:10.1134/s0021364012100116

Cited by 12 publications

(17 citation statements)

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“…Some structural [51][52][53][54][55], optical [56][57][58][59][60][61][62] and magnetic [40,52] properties of recovered cubic ZnO-based solid solutions were studied under ambient pressure. The fine crystalline structure of cubic Ni 1−x Zn x O [51,52] and Mg 1−x Zn x O [53] solid solutions has been examined in a wide concertation range by X-ray powder diffraction.…”

Section: Stabilization Of Rs-zno In the Form Of Solid Solutionsmentioning

confidence: 99%

ZnO under Pressure: From Nanoparticles to Single Crystals

2022

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In the present review, new approaches for the stabilization of metastable phases of zinc oxide and the growth of ZnO single crystals under high pressures and high temperatures are considered. The problems of the stabilization of the cubic modification of ZnO as well as solid solutions on its basis are discussed. A thermodynamic approach to the description of zinc oxide melting at high pressures is described which opens up new possibilities for the growth of both undoped and doped (for example, with elements of group V) single crystals of zinc oxide. The possibilities of using high pressure to vary phase and elemental composition in order to create ZnO-based materials are demonstrated.

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Section: Stabilization Of Rs-zno In the Form Of Solid Solutionsmentioning

confidence: 99%

ZnO under Pressure: From Nanoparticles to Single Crystals

2022

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“…Under 5.03 eV excitation (Figure 7b), a narrow and intense multicomponent feature appears between 3.24 and 3.33 eV. The emission properties of NiO have been studied previously in a few studies, [29,[38][39][40] reporting on the same spectral features. Sokolov et al [29] have constructed a comprehensive scheme which explains the absorption and emission properties of the perfect NiO lattice by identifying three types of electronic transitions: 1) p-d charge transfer (CT), 2) d-d (Ni 2þ ) crystal field, and 3) d-d charge transfer transitions.…”

Section: Light Emissionmentioning

confidence: 57%

“…The emission properties of NiO have been studied previously in a few studies, [29,[38][39][40] reporting on the same spectral features. Sokolov et al [29] have constructed a comprehensive scheme which explains the absorption and emission properties of the perfect NiO lattice by identifying three types of electronic transitions: 1) p-d charge transfer (CT), 2) d-d (Ni 2þ ) crystal field, and 3) d-d charge transfer transitions. While type (1) and (2) only occur when exciting above the "charge transfer gap" of around 4 eV, the internal Ni 2þ transitions (2) occur preferably under sub-bandgap excitation, such as demonstrated in ref.…”

Section: Light Emissionmentioning

confidence: 99%

Light Absorption and Emission by Defects in Doped Nickel Oxide

Karsthof

Frodason

Galeckas

et al. 2022

Advanced Photonics Research

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Nickel oxide is a versatile p‐type semiconducting oxide with many applications in optoelectronic devices, but high doping concentrations are often required to achieve necessary electrical conductivity. In contrast to many other transparent oxide semiconductors, even moderate doping levels in NiO can lead to significant optical absorption in the visible spectral range, limiting the application range of the material. This correlation has been reported extensively in the literature, but its origin has been unknown until now. This work combines experimental data on optical properties from a variety of NiO samples with results from hybrid density functional theory calculations. It shows that strong electron–phonon interaction leads to a significant blueshift (0.6–1 eV) of electronic transitions from the valence band maximum to defect states by light absorption with respect to the thermodynamic charge transition levels. This essentially renders NiO a narrow‐gap semiconductor by defect band formation already at moderate doping levels, with strong light absorption for photon energies of approximately 1 eV. The calculations are also shown to be fully consistent with experimental data on defect‐related light emission in NiO.

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“…[22][23][24] The origin of these two absorption bands has been assigned to the crystal-eld d-d transitions. 25,26 We note that the dashed red line is truncated at 500 nm because the short wavelength limit reported in ref.…”

Section: Sample Preparation and Characterizationmentioning

confidence: 99%