2022
DOI: 10.1063/5.0088708
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Self-triggering topology for high-power nanosecond pulse generators based on avalanche transistors Marx bank circuits and linear transformer driver

Abstract: In recent years, several novel avalanche transistor-based power synthesis topologies have been proposed to improve the output performance of pulse generators based on avalanche transistors. The most promising is the topology based on avalanche transistors Marx Bank Circuits (MBCs) and linear transformer driver (LTD). However, it suffers from the same problems as other semiconductor switch-based LTD generators. The greater the number of LTD modules, the higher the requirements for synchronization and drive capa… Show more

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Cited by 6 publications
(3 citation statements)
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“…The pulsed-power generators based on LTD started with large devices where gas switches are used, aiming at potential applications to inertial fusion drivers [90]. On the other hand, the solid-state LTD based on semiconductor switches has received much attention in industrial applications due to high repetition rate and turning-off ability [91], [92]. In [89], the LTD system consists of 30 modules each containing 24 unit circuits, which can generate a pulse, with a voltage amplitude of 30 kV, a peak current of 250 A, and pulse width adjustable in the range of 50-170 ns.…”
Section: E Linear Transformer Drivermentioning
confidence: 99%
“…The pulsed-power generators based on LTD started with large devices where gas switches are used, aiming at potential applications to inertial fusion drivers [90]. On the other hand, the solid-state LTD based on semiconductor switches has received much attention in industrial applications due to high repetition rate and turning-off ability [91], [92]. In [89], the LTD system consists of 30 modules each containing 24 unit circuits, which can generate a pulse, with a voltage amplitude of 30 kV, a peak current of 250 A, and pulse width adjustable in the range of 50-170 ns.…”
Section: E Linear Transformer Drivermentioning
confidence: 99%
“…According to ATLAS's concentration-dependent low-field mobility model and the doping concentration variation range of the base region, the variation range of electron diffusion coefficient D B is 14 cm 2 /s~34 cm 2 /s. According to (13), the transistor switching-on jitter ranges from 38 ps to 92 ps. In contrast, the jitter of FMMT417 is about 50 ps by counting tens of thousands of waveforms in the experiment as in Figure 4.…”
Section: Simulation and Experimentsmentioning
confidence: 99%
“…The rated pulse current of a silicon-based avalanche transistor is usually less than 100 A. To improve the output power of the pulse-generating equipment, researchers generally adopted methods such as circuit power synthesis [13], spatial power synthesis [14], or avalanche transistor parallel [15]. These methods have taken advantage of the avalanche transistor's excellent stability, which refers to the almost unchanged delay period between the trigger signal's start and the transistor's switching-on instant.…”
Section: Introductionmentioning
confidence: 99%