SEM investigation of structural defect hydrogen passivation in silicon

Katz, Eugene A.; Luk’yanov, A. E.; Butylkina, N. A.; Evtody, B.N.

doi:10.1016/0927-0248(94)90289-5

Cited by 2 publications

(4 citation statements)

References 10 publications

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“…As to general GBs, the value of i * diminishes significantly after implantation (curves b and c in Fig. 1 in [15]), but different GBs (even for the same sample) can be passivated differently. Hydrogen passivation by a KS could also give rise to the integral diffusion length of MIC (from 10 to 50 to 60 mm).…”

Section: Hydrogenation Of As-grown and Annealed Samples Of Shaped Siliconmentioning

confidence: 96%

“…According to [15], for near-coincident (weakly-deviated) GBs an induced current i * (EBIC contrast), as a rule, disappears after passivation in a KS (curve a in Fig. 1 in [15]).…”

Section: Hydrogenation Of As-grown and Annealed Samples Of Shaped Silmentioning

confidence: 98%

“…According to [15], for near-coincident (weakly-deviated) GBs an induced current i * (EBIC contrast), as a rule, disappears after passivation in a KS (curve a in Fig. 1 in [15]). As to general GBs, the value of i * diminishes significantly after implantation (curves b and c in Fig.…”

Section: Hydrogenation Of As-grown and Annealed Samples Of Shaped Siliconmentioning

confidence: 98%

“…1 in [15]). As to general GBs, the value of i * diminishes significantly after implantation (curves b and c in Fig.…”

Section: Hydrogenation Of As-grown and Annealed Samples Of Shaped Silmentioning

confidence: 99%

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Transformation of Electrical Activity of Extended Defects in Silicon Polycrystals under Annealing and Hydrogen Plasma Treatment

Fedotov

Drozdov

Katz

et al. 1999

phys. stat. sol. (a)

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A possibility to control the electrical activity of extended defects (grain boundaries, dislocations) under annealing and hydrogen plasma treatment by different regimes of silicon ribbons grown with the edge-defined film-fed growth technique was studied. It is shown that the results of hydrogenation of grain boundaries (GBs) significantly depend on two factors: the type of GBs (deviated or general) and the state of ribbons (as-grown or annealed). Heat treatment of polysilicon in different ambients results in a considerable decrease of the electrical activity of dislocation, and special and weakly-deviated GBs too. On the contrary, the activity of general and highly-deviated GBs is enhanced after annealing. Our investigation has revealed that the electrical activity of general GBs is defined significantly by the cooling rate after annealing.

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Section: Hydrogenation Of As-grown and Annealed Samples Of Shaped Siliconmentioning

confidence: 96%

“…According to [15], for near-coincident (weakly-deviated) GBs an induced current i * (EBIC contrast), as a rule, disappears after passivation in a KS (curve a in Fig. 1 in [15]).…”

Section: Hydrogenation Of As-grown and Annealed Samples Of Shaped Silmentioning

confidence: 98%

Section: Hydrogenation Of As-grown and Annealed Samples Of Shaped Siliconmentioning

confidence: 98%

“…1 in [15]). As to general GBs, the value of i * diminishes significantly after implantation (curves b and c in Fig.…”

Section: Hydrogenation Of As-grown and Annealed Samples Of Shaped Silmentioning

confidence: 99%

See 2 more Smart Citations

Transformation of Electrical Activity of Extended Defects in Silicon Polycrystals under Annealing and Hydrogen Plasma Treatment

Fedotov

Drozdov

Katz

et al. 1999

phys. stat. sol. (a)

View full text Add to dashboard Cite

show abstract

Hydrogens in semiconductors

Stashans

Kitamura

1997

Journal of Physics and Chemistry of Solids

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SEM investigation of structural defect hydrogen passivation in silicon

Cited by 2 publications

References 10 publications

Transformation of Electrical Activity of Extended Defects in Silicon Polycrystals under Annealing and Hydrogen Plasma Treatment

Transformation of Electrical Activity of Extended Defects in Silicon Polycrystals under Annealing and Hydrogen Plasma Treatment

Hydrogens in semiconductors

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