Semi-empirical equations for electron velocity in silicon: Part II—MOS inversion layer

Schwarz, S. A.; Russek, S. E.

doi:10.1109/t-ed.1983.21424

Cited by 147 publications

(67 citation statements)

References 21 publications

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“…The extraction and physical modelling of the inversion layer mobility has attracted a lot of attention in the past two decades, both at room temperature [42] and at cryogenic T [43]- [Sl]. At room temperature, the effective mobility peff.…”

Section: Effective Mobility At Moderate Transverse Electric Fieldmentioning

confidence: 99%

Parameter Extraction of MOSFETs Operated at Low Temperature

Simoen

Claeys

Martino³

1996

J. Phys. IV France

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Abstract. In this paper, an overview is given of the methods for practical parameter extraction for MOSFETs operated at cryogenic temperatures. The methods considered are based on the input characteristics of the device, from which the charge threshold voltage, the subthreshold slope, the effective mobility, the series resistance and the effective gate length is derived. Whenever possible, the physical basis of the mostly semi-empirical methods will be outlined. Finally, pitfalls and problems, related to low temperature MOSFET characterisation, like transient and freeze-out effects, self-heating, etc, are briefly discussed.

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Section: Effective Mobility At Moderate Transverse Electric Fieldmentioning

confidence: 99%

Parameter Extraction of MOSFETs Operated at Low Temperature

Simoen

Claeys

Martino³

1996

J. Phys. IV France

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“…The physics of effective surface mobility (μ eff ) of carriers in MOS inversion layer, which originate from wide variety of different scattering mechanisms, has been extensively studied in the literature over the last 50 years [1][2][3][4][5][6][7][8]. Carrier scattering in the inversion layer is generally dominated by [2][3][4][5][6]8] coulomb scattering, phonon scattering and surface roughness scattering (μ c , μ ph , μ sr being the related mobility terms respectively).…”

Section: Introductionmentioning

confidence: 99%

“…Carrier scattering in the inversion layer is generally dominated by [2][3][4][5][6]8] coulomb scattering, phonon scattering and surface roughness scattering (μ c , μ ph , μ sr being the related mobility terms respectively). Among them, coulomb scattering originates from sources like ionized impurities in the substrate, dangling bonds at the Si/SiO 2 interface (N IT ), etc.…”

Section: Introductionmentioning

confidence: 99%

Mobility degradation due to interface traps in plasma oxynitride PMOS devices

Islam

Maheta

Das

et al. 2008

2008 IEEE International Reliability Physics Symposium

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Mobility degradation due to generation of interface traps (Δμ eff (N IT )) is a well-known phenomenon that has been theoretically interpreted by several mobility models. Based on these analysis, there is a general perception that Δμ eff (N IT ) is relatively insignificant (compared to Δμ eff due to ionized impurity) and as such can be safely ignored for performance and reliability analysis. Here, we investigate the importance of considering Δμ eff (N IT ) for reliability analysis by analyzing a wide variety of plasma oxynitride PMOS devices using both parametric and physical mobility models. We find that contrary to popular belief this correction is fundamentally important for robust and uncorrupted estimates of the key reliability parameters like threshold-voltage shift, lifetime projection, voltage acceleration factor, etc. Therefore, in this paper, we develop a generalized algorithm for estimating Δμ eff (N IT ) for plasma oxynitride PMOS devices and systematically explore its implications for NBTI-specific reliability analysis.

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“…Research has shown that carrier mobility near the semiconductor surface is lower than the bulk value [18,19]; this is particularly so for the SCM oxide-silicon interface which can be expected to be high in various forms of crystal defects and interface trap density. This is especially important for inversion layer carrier transport which is parallel to the surface, which we believe to be the main cause of the difference observed between Fig.…”

Section: Data Of Simulation With Mobility Degradationmentioning

confidence: 97%

Modeling mobility degradation in scanning capacitance microscopy for semiconductor dopant profile measurement

Yao

Yeow

2004

SPIE Proceedings

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This paper addresses the influence of mobility degradation on the SCM measurement via modeling and comparison with experimental SCM data. The rational for looking into mobility effect is that SCM capacitance measurement is carried out at 915 MHz. At this frequency, resistance of semiconductor surface can be comparable to the reactance of the SCM capacitance. In our simulation carrier mobilities at the semiconductor surface are set low compared to their bulk values to reflect surface mobility degradation. Our results show that the simulated SCM dC / dV is significantly reduced in the vicinity of p-n junction reflecting what is observed in experiment. We attribute this to the fact that the capacitance between the inverted surface and the SCM probe is not detected due to the high resistance (compared to the reactance of the SCM capacitance) of the inversion layer below the semiconductor and oxide interface. Only the capacitance on the accumulation side is extracted thus leading to the lowering of the detected SCM capacitance and dC / dV . The major conclusion is that the effect of high resistance due to mobility degradation has to be treated carefully for accurate extraction of dopant profile from experimental SCM data.

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Semi-empirical equations for electron velocity in silicon: Part II—MOS inversion layer

Cited by 147 publications

References 21 publications

Parameter Extraction of MOSFETs Operated at Low Temperature

Parameter Extraction of MOSFETs Operated at Low Temperature

Mobility degradation due to interface traps in plasma oxynitride PMOS devices

Modeling mobility degradation in scanning capacitance microscopy for semiconductor dopant profile measurement

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