Semi-insulating 4H-SiC lateral bulk acoustic wave resonators

Jiang, Boyang; Opondo, Noah; Bhave, Sunil A.

doi:10.1063/5.0045232

Cited by 8 publications

(5 citation statements)

References 22 publications

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“…LOBARs are overtone acoustic wave resonators, where the acoustic cavity length (and hence the resonances) is controlled by the lateral, lithographically-defined extent of the resonator. SiC LOBARs have been demonstrated with mechanical quality-factors of 3000 to 100,000 with frequencies ranging from MHz to GHz [21,22,23]. In this work we study the spatial characteristic of the acoustic coupling of LOBARs to an ensemble of silicon monovacancies, demonstrate spatial and directional strain sensitivity and extend this to show the first example of coherent acoustic control of silicon monovacancies in silicon carbide.…”

Section: Introductionmentioning

confidence: 79%

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Spin-Acoustic Control of Silicon Vacancies in 4H Silicon Carbide

Dietz¹,

Jiang²,

Bhave³

et al. 2022

Preprint

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We demonstrate direct, acoustically mediated spin control of naturally occurring negatively charged silicon monovacancies (V − Si ) in a high quality factor Lateral Overtone Bulk Acoustic Resonator fabricated out of high purity semi-insulating 4H-Silicon Carbide. We compare the frequency response of silicon monovacancies to a radio-frequency magnetic drive via optically-detected magnetic resonance and the resonator's own radio-frequency acoustic drive via optically-detected spin acoustic resonance and observe a narrowing of the spin transition to nearly the linewidth of the driving acoustic resonance. We show that acoustic driving can be used at room temperature to induce coherent population oscillations. Spin acoustic resonance is then leveraged to perform stress metrology of the lateral overtone bulk acoustic resonator, showing for the first time the stress distribution inside a bulk acoustic wave resonator. Our work can be applied to the characterization of high quality-factor micro-electro-mechanical systems and has the potential to be extended to a mechanically addressable quantum memory.

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Section: Introductionmentioning

confidence: 79%

“…A Mo-AlN-Mo layer of 100 nm:1000 nm:100 nm thickness is deposited with sputtering. The LOBAR is fabricated with a combination of dry and wet etching, with further detail found in [23]. Finite Element Simulations are made using the COMSOL Multiphysics package to simulate device performance.…”

Section: Methodsmentioning

confidence: 99%

Spin-Acoustic Control of Silicon Vacancies in 4H Silicon Carbide

Dietz¹,

Jiang²,

Bhave³

et al. 2022

Preprint

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“…In these cases, the same process is used, with the difference that the ion implantation of hydrogen at a controlled depth on the monolithic SiC substrate on which the epitaxial 4H or 6H SiC was grown is utilized to detach the SiC layer after wafer bonding and obtain the desired SiC/SiO 2 stack for the MEMS fabrication [ 156 ]. Using this method, or, in some cases, bulk micromachining techniques from SiC substrates, several MEMS applications have been addressed using 4H- and 6H-SiC, such as pressure sensors [ 157 ], thermal sensors [ 158 ], accelerometers [ 159 ], mechanical resonators [ 160 , 161 , 162 ], and gyroscopes [ 163 ].…”

Section: Sic Memsmentioning

confidence: 99%

Emerging SiC Applications beyond Power Electronic Devices

et al. 2023

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In recent years, several new applications of SiC (both 4H and 3C polytypes) have been proposed in different papers. In this review, several of these emerging applications have been reported to show the development status, the main problems to be solved and the outlooks for these new devices. The use of SiC for high temperature applications in space, high temperature CMOS, high radiation hard detectors, new optical devices, high frequency MEMS, new devices with integrated 2D materials and biosensors have been extensively reviewed in this paper. The development of these new applications, at least for the 4H-SiC ones, has been favored by the strong improvement in SiC technology and in the material quality and price, due to the increasing market for power devices. However, at the same time, these new applications need the development of new processes and the improvement of material properties (high temperature packages, channel mobility and threshold voltage instability improvement, thick epitaxial layers, low defects, long carrier lifetime, low epitaxial doping). Instead, in the case of 3C-SiC applications, several new projects have developed material processes to obtain more performing MEMS, photonics and biomedical devices. Despite the good performance of these devices and the potential market, the further development of the material and of the specific processes and the lack of several SiC foundries for these applications are limiting further development in these fields.

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“…3(c)-(d)]. Researchers have also demonstrated higher Q devices for free-standing thin-film devices by combining piezoelectric thin-films with low acoustic loss substrates [73]. Finally, the effort in studying the dispersion of acoustic structures and acoustic bandgaps through photonic crystal structures [Fig.…”

Section: Enhancing Quality Factors and Reducing Lossmentioning

confidence: 99%

Microwave Acoustic Devices: Recent Advances and Outlook

Gong

Yang

et al. 2021

IEEE J. Microw.

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This paper presents a short review of the microwave acoustics area, where exciting material innovations and performance advancements have been made in the past decade. The ever-growing demand for more sophisticated passive signal processing functions on-chip has fueled these developments. As a result, microwave acoustic devices have maintained performance leadership in mobile applications. By evaluating three fundamental parameters, namely electromechanical coupling (k 2 ), quality factors, and frequency scalability, of microwave acoustics, this paper aims to, extensively but not exhaustively, capture the rationales behind approaches achieving higher performance microsystems. Outlooks for different material systems and addressing their underlying challenges are also offered in hopes of establishing a balanced roadmap for future microwave acoustics development.

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Semi-insulating 4H-SiC lateral bulk acoustic wave resonators

Cited by 8 publications

References 22 publications

Spin-Acoustic Control of Silicon Vacancies in 4H Silicon Carbide

Spin-Acoustic Control of Silicon Vacancies in 4H Silicon Carbide

Emerging SiC Applications beyond Power Electronic Devices

Microwave Acoustic Devices: Recent Advances and Outlook

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