Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE

Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys

“…Recently, Pantzas et al 33 proposed that periodically inserting thin barriers of GaN during InGaN growth could potentially promote the growth of high-quality InGaN. This proposition was based on the assumption that the roughening of the surface of InGaN, compositional fluctuations, and strain relaxation are all linked to the segregation of indium at the surface of the growing film.…”

Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study

“…Such local In-rich regions contribute to the transition from 2-D to 3-D growth observed in thick epilayers. Recently, we proposed growing InGaN epilayers by periodically inserting ultrathin GaN interlayers during the growth process to absorb the excess In and relieve the InGaN compressive strain [20]. This approach was shown to allow the growth of thick single-phase InGaN layers of high crystalline quality.…”

Modeling of InGaN/Si tandem cells: comparison between 2-contacts/4-contacts

“…One of the most important challenges that limits the performance of this material is the growth of high-quality relatively-thick InGaN layer. Due to large lattice mismatch between InN and GaN, InGaN a e-mail: walid.elhuni@geeps.centralesupelec.fr grown layer start to relax through dislocation defects after a certain thickness, called critical thickness [9,10]. This critical thickness depends on indium composition to the extend that at 30% of indium the critical thickness is less than 10 nm [11,12].…”

“…However, a solution that has been initiated by Pantzas et al [9] in order to avoid the relaxation issue, which is semibulk structure. This structure is obtained by periodically stopping the indium flux, during the growth process, before arriving to the critical thickness.…”