Semiconducting and electrocatalytic properties of sputtered cobalt oxide films

Schumacher, Lynn C.; Holzhueter, I. B.; Hill, Ian R.; Dignam, M. J.

doi:10.1016/0013-4686(90)90030-4

Cited by 88 publications

(50 citation statements)

References 18 publications

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“…amidinates and cyclodexrtins) are now also proposed as the precursors (Li et al, 2008;Papadopoulos et al, 2010). The sputtering process, in turn, was conducted in the presence of pure Co or Co 3 O 4 as targets and plasma generated in a gas mixture containing O 2 (Ingler Jr et al, 2006;Schumacher et al, 1990 (Jiao & Frei, 2009). This report aroused great scientific interest.…”

Section: Water Splitting Systemsmentioning

confidence: 99%

Cold Plasma – A Promising Tool for the Development of Electrochemical Cells

Tyczkowski¹

2012

Electrochemical Cells - New Advances in Fundamental Researches and Applications

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Section: Water Splitting Systemsmentioning

confidence: 99%

Cold Plasma – A Promising Tool for the Development of Electrochemical Cells

Tyczkowski¹

2012

Electrochemical Cells - New Advances in Fundamental Researches and Applications

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“…Moreover, they have also been used in oxygen evolution, reduction reactions, ion exchange process [8][9][10][11][12][13][14][15][16][17][18][19][20], and design of modified electrodes aiming at the application in electrooxidation of chemicals such as carbohydrates and thiols, hydrogen peroxide, aspirin and acetaminophen, hydroquinone and alcohols [21][22][23][24][25][26][27]. To fabricate cobalt oxide nanostructures, various synthesis methods, e.g., spray pyrolysis, sonication assisted methods, sputtering, thermal salt decomposition, powder immobilization, irradiation, sol-gel technique [28][29][30][31][32][33][34], and electrodeposition from aqueous solutions [13,[21][22]25,35], have been investigated. Compared with polycrystalline counterparts, cobalt oxide nanocrystals are found to be characterized with superior physical and chemical properties [36].…”

Section: Introductionmentioning

confidence: 99%

Synthesis temperature dependence of morphologies and properties of cobalt oxide and silicon nanocrystals

Koji

Iqbal

et al. 2011

Front. Mater. Sci.

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Cobalt and cobalt oxide nanocrystals were synthesized on Si substrates from aqueous cobalt nitrate [Co(NO 3 ) 2 $6H 2 O] powder via chemical vapor deposition method. Scanning electron microscope, field emission scanning electron microscope, and transmission electron microscope observations show different morphologies, such as continuous films, nano-bars, nano-dices, and nano-strings, depending on the synthesis temperature. The crystal structure characterization was conducted using Xray diffraction methods. Furthermore, the properties of the samples were characterized using Raman spectroscopic analysis and vibrating sample magnetometer. The morphology change was discussed in terms of synthesis environments and chemical interactions between cobalt, oxygen, and silicon.

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“…Several deposition methods have been used in preparing cobalt monoxide thin films among which are sol-gel dip-coating technique [11], chemical vapour deposition [12], electron beam evaporation [13], spray pyrolysis [14], sputtering [15], γ-irradiation [16], and sonication assisted methods [17].…”

Section: Introductionmentioning

confidence: 99%

Effect of Concentration on the Optical and Solid State Properties of CoO Thin Films Deposited Using the Aqueous Chemical Growth (ACG) Method

Mammah¹,

Opara²,

Sigalo³

et al. 2012

AMPC

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Thin films of Cobalt(II) Oxide were deposited from equimolar concentrations of Cobalt Chloride, and Hexamethylenetetramine on clean glass substrates using the Aqueous Chemical Growth method in order to determine the effect of precursor concentration on their optical and solid state properties. The analytical tools used for the study include, Rutherford Back Scattering (RBS) spectroscopy for elemental analysis and determination of film thickness, X-Ray Difftraction (XRD) for crystallographic structure, a UV-VIS spectrophotometer for optical and other solid state properties and a photomicroscope for photomicrographs. The results indicate that an increase in the concentration of precursor materials makes ACG CoO thin film a better absorber of ultraviolet radiation, a better transmitter of infra-red radiation, a reflector of visible radiation and a material having an increased band gap. The ACG CoO thin film deposited from 0.1 M precursor concentration was found to be a suitable material for the construction of thermographic devices, poultry houses etc. It can also serve as window layer in solar cells among other optoelectronic applications.

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Semiconducting and electrocatalytic properties of sputtered cobalt oxide films

Cited by 88 publications

References 18 publications

Cold Plasma – A Promising Tool for the Development of Electrochemical Cells

Cold Plasma – A Promising Tool for the Development of Electrochemical Cells

Synthesis temperature dependence of morphologies and properties of cobalt oxide and silicon nanocrystals

Effect of Concentration on the Optical and Solid State Properties of CoO Thin Films Deposited Using the Aqueous Chemical Growth (ACG) Method

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